Manufacturing method of multi-grid field effect transistor

Abstract

The invention discloses a manufacturing method of a multi-grid field effect transistor. The manufacturing method is characterized in that autocollimation interval sidewalls are formed on the two sides of a grid, and in the process of carrying out ion implantation to form a source electrode region and a drain region, a fin-shaped structure at the two sides of the grid can be shielded so as to prevent adulteration and injection of the ion, and the length of a channel in the fin-shaped structure positioned below the grid is increased, so as to realize the purposes that a short channel effect is restrained, the leakage current is reduced, the power consumption of the multi-grid field effect transistor is reduced, and the device property of the multi-grid field effect transistor is improved; by forming a blocking layer on the multi-grid field effect transistor and utilizing a dry method to sculpture the blocking layer and inclined autocollimation blocking masks can be formed on the two sides of a patterned hard mask layer; the autocollimation interval sidewalls are formed by utilizing the autocollimation blocking mask to sculpture, thereby utilizing an autocollimation technology to form the autocollimation interval sidewalls without utilizing photoetching and sculpture process to define in a forming process, thereby reducing the process cost, and improving the process efficiency.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor process device, in particular to a manufacturing method of a multi-gate field effect transistor. Background technique [0002] In recent years, metal-oxide-semiconductor field-effect transistors (MOSFETs) have continued to shrink in size. This is to increase speed, improve component integration and reduce the cost of integrated circuits. The size of transistors continues to decrease, and the reduction of transistors has reached limit of various performances. The thickness of the gate oxide and the depth of the source / drain junction have reached their limits. [0003] Therefore, multiple gates or multi-gate field effect transistors (Multi-Gate Transistors) have been developed in the industry, and the multi-gate field effect transistor technology is a new circuit structure technology. Traditional transistors have only one gate for each transistor to control the passage or interruption o...

AI Technical Summary

Problems solved by technology

However, due to size constraints, the horizontal length of the fin structure will gradually decrease, and the channel length of the device will be affected.

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