Method for forming trench type metal-oxide-semiconductor barrier Schottky device
A semiconductor and trench-type technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as limited effects, and achieve the effect of simple formation method and improved stability
Active Publication Date: 2016-11-16
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0013] However, in the actual production process, it is found that the effect achieved by the above method is very limited
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[0039] The technical solution of the present invention will be described clearly and completely through specific embodiments below in conjunction with the accompanying drawings. Apparently, the described embodiments are only a part of the possible implementation modes of the present invention, not all of them. According to these embodiments, all other implementation manners that can be obtained by those skilled in the art without creative efforts belong to the protection scope of the present invention.
[0040] Such as Figure 6 As shown, a semiconductor substrate 100 of a first doping type is provided, and the semiconductor substrate 100 includes a trench transistor region 101 and a Schottky barrier region 102 . The material of the semiconductor substrate 100 may be single crystal silicon, silicon, germanium, gallium arsenide or silicon germanium compound, or a silicon on insulator (SOI, Silicon On Insulator) substrate. In one embodiment, the semiconductor Substrate 100 is N...
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The invention discloses a trench metal-oxide-semiconductor barrier Schottky forming method. A Schottky barrier contact opening is formed by a first etching step and a second etching step, and a barrier layer is used as an etching end point detection structure at the first etching step, so that precision control of etching end points during first etching can be realized. Additionally, measuring the thickness of a dielectric layer and using different etching time for first etching according to different measured thicknesses are not needed, and accordingly the Schottky barrier contact opening forming method is simpler. Since the first etching can be accurately stopped on the barrier layer, the depth of the portion, entering a semiconductor region, of the Schottky barrier contact opening can be determined only by controlling second etching technological parameters at the second etching step after the first etching step and can be controlled more precisely, and performance stability of the trench metal-oxide-semiconductor barrier Schottky is further improved.
Description
technical field [0001] The invention belongs to the field of semiconductor power devices (Power Device), in particular to a method for forming a trench type metal-oxide-semiconductor barrier Schottky device (Trench MOS Barrier Schottky, TMBS for short). Background technique [0002] With the continuous development of semiconductor technology, power devices, as a new type of device, are widely used in fields such as disk drives and automotive electronics. Power devices need to be able to withstand large voltage, current and power loads. However, existing devices such as MOS transistors cannot meet the above requirements. Therefore, in order to meet the needs of applications, various power devices have become the focus of attention. [0003] In order to improve the cross-frequency characteristics of power devices, a common method at present is to integrate Schottky barriers in trench transistors. [0004] Combine below Figure 1 to Figure 5 A brief introduction to the format...
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IPC IPC(8): H01L21/336
CPCH01L29/8725H01L29/66143
Inventor 贾璐
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP