Interconnection structure of high-voltage integrated circuit

Abstract

The invention discloses an interconnection structure of a high-voltage integrated circuit and belongs to the technical field of semiconductor power devices. According to the interconnection structure, the high-voltage integrated circuit provided with a transverse high-voltage power device, a drain electrode (or anode) of the transverse high-voltage power device and a high-voltage circuit are connected through a plurality of metal connection wires with narrow line-widths, the metal connection wires with narrow line-widths share current loaded by the high-voltage power device, and corresponding distances among the metal connection wires with narrow line-widths are provided. By utilizing the interconnection structure, the generation of high-voltage interconnection wire field charges can be reduced, the effect of an interconnection wire potential to a device surface electric field is effectively shielded, the voltage resistance of the device when the high-voltage interconnection wire is provided is enhanced, and the performance of the device is improved. The interconnection structure can be used for high-voltage integrated circuits of power devices such as LDMOS (Low Voltage MOSFETs), LIGBT (Lateral Insulated Gate Bipolar Transistor) or 3D RESURF with a single-RESURF or double-RESURF structure.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and specifically relates to a high-voltage integrated circuit interconnection structure. Background technique [0002] HVIC (High Voltage Integrated Circuit) has made great progress in power management, motor control, electronic ballasts and other fields, and will receive wider attention. After HVIC integrates high-voltage and low-voltage devices on the same chip, in order to realize functions such as transmitting control signals from the low-voltage side to the high-voltage side, high-voltage interconnections (High Voltage Interconnection, HVI) often need to cross high-voltage devices, such as lateral double-diffused metal oxide Semiconductor field effect transistor LDMOS (Lateral Double-Diffused MOSFET) and lateral insulated gate bipolar transistor LIGBT (Lateral Insulated Gate Bipolar Transistor) also often need to cross the local area on the surface of the isolation region...

AI Technical Summary

Problems solved by technology

[0004] The invention aims at that in the high-voltage interconnection circuit, when the interconnection line crosses the surface of the high-voltage power device or the isolation area, the power line is locally concentrated, and induced charges are generated on the device surface, making it difficult to completely exhaust the drift area, resulting in a decrease in the breakdown voltage of the device The technical problem of providing a high-voltage interconnection structure

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