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Preparation method of cake-piece-shaped N/BiVO4 photocatalyst growing along high-activity (040) crystal orientation

A crystal plane orientation, photocatalyst technology, applied in physical/chemical process catalysts, metal/metal oxide/metal hydroxide catalysts, chemical instruments and methods, etc., can solve the problem of low photocatalytic activity and achieve crystal crystallization High density, uniform particle size and simple preparation method

Active Publication Date: 2013-04-10
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of high active (040) crystal plane orientation growth disc sheet N / BiVO 4 Photocatalyst preparation method to address BiVO 4 The problem of low photocatalytic activity

Method used

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  • Preparation method of cake-piece-shaped N/BiVO4 photocatalyst growing along high-activity (040) crystal orientation
  • Preparation method of cake-piece-shaped N/BiVO4 photocatalyst growing along high-activity (040) crystal orientation
  • Preparation method of cake-piece-shaped N/BiVO4 photocatalyst growing along high-activity (040) crystal orientation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Step 1: Add 0.01mol of Bi(NO 3 ) 3 ·5H 2 O was dissolved in 20ml of deionized water, stirred for 30min to obtain a bismuth salt solution, and 0.01mol of NH 4 VO 3 Dissolve in 20ml of 80°C deionized water, heat and stir for 20 minutes to obtain a vanadium salt solution, mix the bismuth salt solution and vanadium salt solution, and stir for 15 minutes to form a mixed solution A;

[0023] Step 2: Take NaN 3 As nitrogen source, NaN 3 by NaN 3 : Bi(NO 3 ) 3 ·5H 2 The molar ratio of O=0.8 is added to the mixed solution A, and the mixed solution B is formed after stirring; the NH 4 Cl and N 2 h 4 ·H 2 O by NaN 3 : NH 4 Cl:N 2 h 4 ·H 2 The molar ratio of O=3:1:1 will NH 4 Cl and N 2 h 4 ·H 2 O was added to the mixed solution B, and magnetically stirred for 30 minutes to form a precursor;

[0024] Step 3: Put the precursor into the polytetrafluoroethylene reaction kettle, pass nitrogen into the reaction kettle for 3 minutes to discharge the air in the kettl...

Embodiment 2

[0027] Step 1: Add 0.01mol of Bi(NO 3 ) 3 ·5H 2 O was dissolved in 20ml of deionized water, stirred for 30min to obtain a bismuth salt solution, and 0.01mol of NH 4 VO 3 Dissolve in 20ml of 80°C deionized water, heat and stir for 20 minutes to obtain a vanadium salt solution, mix the bismuth salt solution and vanadium salt solution, and stir for 15 minutes to form a mixed solution A;

[0028] Step 2: Take NaN 3 As nitrogen source, NaN 3by NaN 3 : Bi(NO 3 ) 3 ·5H 2 The molar ratio of O=0.9 is added to the mixed solution A, and the mixed solution B is formed after stirring; the NH 4 Cl and N 2 h 4 ·H 2 O by NaN 3 : NH 4 Cl:N 2 h 4 ·H 2 The molar ratio of O=3:1:1 will NH 4 Cl and N 2 h 4 ·H 2 O was added to the mixed solution B, and magnetically stirred for 30 minutes to form a precursor;

[0029] Step 3: Put the precursor into the polytetrafluoroethylene reaction kettle, pass nitrogen into the reaction kettle for 5 minutes to discharge the air in the kettle...

Embodiment 3

[0032] Step 1: Add 0.01mol of Bi(NO 3 ) 3 ·5H 2 O was dissolved in 20ml of deionized water, stirred for 30min to obtain a bismuth salt solution, and 0.01mol of NH 4 VO 3 Dissolve in 20ml of 80°C deionized water, heat and stir for 20 minutes to obtain a vanadium salt solution, mix the bismuth salt solution and vanadium salt solution, and stir for 15 minutes to form a mixed solution A;

[0033] Step 2: Take NaN 3 As nitrogen source, NaN 3 by NaN 3 : Bi(NO 3 ) 3 ·5H 2 The molar ratio of O=1.0 is added to the mixed solution A, and the mixed solution B is formed after stirring; the NH 4 Cl and N 2 h 4 ·H 2 O by NaN 3 : NH 4 Cl:N 2 h 4 ·H 2 The molar ratio of O=3:1:1 will NH 4 Cl and N 2 h 4 ·H 2 O was added to the mixed solution B, and magnetically stirred for 30 minutes to form a precursor;

[0034] Step 3: Put the precursor into the polytetrafluoroethylene reaction kettle, pass nitrogen into the reaction kettle for 6 minutes to discharge the air in the kettl...

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Abstract

The invention discloses a preparation method of a cake-piece-shaped N / BiVO4 photocatalyst growing along a high-activity (040) crystal orientation. The method comprises the following steps: mixing a bismuth salt solution with a vanadium salt solution according to a molar ratio Bi:V=1:1, and uniformly stirring to form a mixture A; adding NaN3 into the mixture A according to the molar ratio NaN3:Bi=(0.8-1.1):1, and stirring to form a mixture B; adding NH4Cl and N2H4.H2O into the mixture B according to the molar ratio NaN3: NH4Cl: N2H4.H2O=3:1:1 to form a precursor; and adopting a microwave hydrothermal method to obtain N / BiVO4 powder. The preparation method has the advantages of simplicity in operation and short reaction time, the synthesized N / BiVO4 powder grows along the high-activity (040) crystal orientation, and the particle morphology takes the shape of a cake piece, so that the photocatalytic activity of the N / BiVO4 powder under ultraviolet light and visible light irradiation is higher.

Description

【Technical field】 [0001] The invention belongs to the field of functional materials, in particular to a kind of N / BiVO grown in the shape of a round cake along the orientation of a highly active (040) crystal plane 4 Preparation method of photocatalyst. 【Background technique】 [0002] BiVO 4 It is a new type of visible light responsive photocatalyst. BiVO 4 There are three main crystal forms: tetragonal zircon, monoclinic scheelite structure and tetragonal scheelite structure. Monoclinic scheelite structure BiVO 4 The forbidden band width is 2.4eV, the response band is within 550nm, and it is located in the central part of visible light. From the perspective of effectively utilizing sunlight, BiVO 4 It is a material with great application prospect. [0003] However, like other visible light catalysts, BiVO 4 It also has some disadvantages, such as small specific surface area, long migration distance of photogenerated electrons and holes, and high recombination probabi...

Claims

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Application Information

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IPC IPC(8): B01J23/22B01J35/04C02F1/30C02F1/32
Inventor 谈国强张丽丽任慧君
Owner SHAANXI UNIV OF SCI & TECH
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