2results about How to "No post-processing required" patented technology

This invention provides a method and apparatus for preparing controllable-size silicon carbide using a chemical vapor deposition reactor. The method includes the following steps: S1, heating the reactor to the reaction temperature; S2, introducing a mixed gas consisting of H2 and a protective gas from the bottom of the reactor, and introducing SiC particles from the top of the reactor, so that the SiC particles are suspended in the reactor and form a stable cycle of "central jetting zone - annular reflux zone"; S3, using the mixed gas as a carrier gas, introducing a precursor gas from the bottom of the reactor to carry out a pyrolysis deposition reaction, and adjusting the carrier gas flow rate in real time to ensure that the deposited SiC particles form a stable cycle; S4, stopping the reaction and cooling down, and then starting the reactor to collect the product. This method solves the problems of traditional methods, such as difficulty in balancing large particle size and high purity, difficulty in post-processing, or introduction of impurities, achieving efficient preparation of high-purity, uniform controllable-size silicon carbide particles without the need for subsequent impurity removal or crushing.

The invention relates to the field of metal material additive manufacturing, in particular to a high-strength and hydrogen embrittlement-resistant metastable high-entropy alloy and a preparation method thereof. The metastable high-entropy alloy is prepared from pre-alloyed powder prepared by an inert gas atomization method through a laser powder bed melting technology, has excellent hydrogen embrittlement resistance and high strength, and has wide application prospects in hydrogen storage system components with complex structures or hydrogen environment pipeline pieces of spacecrafts.