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Pn junction with ultra-low junction capacity density and manufacture method thereof

A technology of junction capacitance density and pn junction, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problem of high cost

Active Publication Date: 2015-06-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] 3. The cost of long-term high-temperature furnace annealing process is very high

Method used

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  • Pn junction with ultra-low junction capacity density and manufacture method thereof
  • Pn junction with ultra-low junction capacity density and manufacture method thereof
  • Pn junction with ultra-low junction capacity density and manufacture method thereof

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Embodiment Construction

[0020] See figure 1 , This is the vertical section of the pn junction with ultra-low junction capacitance in this application. On the heavily doped substrate 10 with impurities of the first conductivity type is a lightly doped epitaxial layer 11 with impurities of the first conductivity type. The epitaxial layer 11 has two isolation structures 12 of dielectric material, and the epitaxial layer 11 between the two isolation structures 12 is defined as an active region 50. Two filling structures 30 are symmetrically distributed in the epitaxial layer 11 of the active region 50. The distance c between the two filling structures 30 is less than or equal to 1.5 times the width d of each filling structure, so that the two depletion regions between the polysilicon 18 and the epitaxial layer 11 on the upper part of the two filling structures 30 are mutually horizontal. connection. Preferably, on the premise of meeting the above-mentioned dimensions, the outer sides of the two filling ...

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Abstract

The invention discloses a pn junction with ultra-low junction capacity density. An active area is defined by two isolation structures in an epitaxial layer with first conduction type impurities. Two filling structures are symmetrically distributed in the epitaxial layer of the active area, and the distance between the two filling structures is smaller than or equal to 1.5 times the width of each filling structure. Each filling structure is divided into an upper portion and a lower portion, wherein the lower portion is monox, and the upper portion is polycrystalline silicon with second conduction type impurities. The total height of each filling structure is larger than or equal to 3 micrometers, the thickness of the monox on the lower portion of each filling structure is larger than or equal to 2.5 micrometers, and the upper surface of the monox on the lower portion of each filling structure is lower than the upper surface of the epitaxial layer, so the pn junctions are formed between the epitaxial layer and the polycrystalline silicon on the upper portions of the two filling structures. Mixing density of the polycrystalline silicon on the upper portions of the filling structures is much larger than that of the epitaxial layer. A first conduction type and a second conduction type are respectively p-typed and n-typed or opposite. The invention further discloses a manufacture method of the pn junction. The pn junction has ultra-low junction capacity density which is smaller than 0.05 fF / Mu m2.

Description

Technical field [0001] This application relates to a semiconductor integrated circuit device, in particular to a pn junction diode. Background technique [0002] The junction capacitance of the pn junction is equal to the sum of the barrier capacitance and the diffusion capacitance. When the pn junction is forward biased, the junction capacitance is dominated by the diffusion capacitance; when the pn junction is reverse biased, the junction capacitance is dominated by the barrier capacitance. [0003] A transient voltage suppressor (TVS) is a diode that is connected in parallel with the protected circuit to achieve overvoltage protection. The principle of the TVS device is to use the avalanche effect of the diode. When the voltage reaches the breakdown voltage, the TVS device enters the avalanche breakdown zone of volt-ampere characteristics, and the current flowing through the TVS device increases sharply, while the voltage across the TVS device is almost unchanged , Thereby byp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/861H01L21/329
Inventor 钱文生石晶
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP