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Laser annealing method and device

A technology of laser annealing and pulsed laser, which is applied in the direction of laser welding equipment, electrical components, circuits, etc., and can solve the problem of insufficient output

Inactive Publication Date: 2013-04-10
V TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the third harmonic can only use about 30% of the fundamental wave output, it is difficult to obtain sufficient output.

Method used

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  • Laser annealing method and device

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Embodiment Construction

[0066] Embodiments of the present invention will be specifically described below with reference to the drawings. FIG. 1 is a diagram showing a laser annealing apparatus using microlenses. The laser annealing device shown in FIG. 1 is used in the manufacturing process of a semiconductor device such as a thin film transistor with an inverted stagger structure. A device for forming polysilicon film by region polycrystallization. This laser annealing apparatus using a microlens shapes laser beams emitted from an oscillator 1 into parallel beams by a lens group 2 and irradiates an irradiated object 6 through a microlens array formed of a plurality of microlenses 5 . The laser oscillator 1 is a device using, for example, a YAG laser as a light source as described later in FIG. 2 , and emits two types of laser light with a wavelength of 355 nm and 1064 nm with a delay time between them. The microlens array is a member in which a plurality of microlenses 5 are arranged on a transpa...

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Abstract

Disclosed Are A Laser Annealing Method And Device Capable Of Applying Sufficient Energy To An Amorphous Silicon Film And Efficiently Causing A Phase Change Therein When Laser Annealing The Amorphous Silicon Layer And Forming A Low Temperature Polysilicon Film, Even When Using An Inexpensive Laser Light Source Device Such As A Yag Laser. A Fundamental Wave From A Yag Light Source (11) Is Converted With Wavelength Converters (12, 13) Into A Second Harmonic And A Third Harmonic, And The Third Harmonic Laser Light Is Beamed Upon A Body To Be Beamed (18), While The Fundamental Wave Is Beamed Upon The Body To Be Beamed (18) At Delays Of Approximately 10Ns And 20Ns, Via An Approximately 3M Third Optical Assembly (21) And An Approximately 6M Fourth Optical Assembly (22). The Fused Part Of The Amorphous Silicon Film That Is Fused With The Third Harmonic Is Thus Beamed By The Fundamental Wave Being Segmented Into A P Wave And An S Wave, And The Yag Fundamental Wave, Which Is Not Absorbed By The Amorphous Silicon Film, Is Absorbed By The Fused Silicon, And Is Efficaciously Used In The Heating Thereof.

Description

technical field [0001] The present invention relates to a laser annealing method and device for annealing an amorphous silicon film to form a low-temperature polysilicon film in a thin-film transistor liquid crystal panel, etc., and particularly relates to the use of a microlens array that can only correspond to the region where a thin-film transistor should be formed Laser annealing method and device for annealing. Background technique [0002] In a liquid crystal panel, an amorphous silicon film is formed on a glass substrate, and a continuous laser beam having a linear beam shape is used to scan the amorphous silicon film from one end of the substrate in a direction perpendicular to the longitudinal direction of the beam. , forming a low-temperature polysilicon film. By scanning the linear laser, the amorphous silicon film is heated by the laser, and once the amorphous silicon film is melted, the molten silicon is rapidly cooled and solidified by the passing of the laser...

Claims

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Application Information

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IPC IPC(8): H01L21/20H01L21/268
CPCB23K26/0648B23K26/066H01L21/02532H01L21/02675H01L21/268H01L21/20
Inventor 梶山康一水村通伸滨野邦幸
Owner V TECH CO LTD
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