Atomic Layer Deposition Equipment Based on Adaptive Pressure Control Based on Simulated Annealing Algorithm

Abstract

The invention discloses atomic layer deposition equipment for self-adaptive pressure control based on a simulated annealing algorithm. The atomic layer deposition equipment comprises a deposition chamber, a plasma gas generating system, a radio-frequency power supply matcher, a radio-frequency power supply, a gas pressure acquisition circuit, a simulated annealing control circuit, a gas extractor and a gas filling device. According to the atomic layer deposition equipment for self-adaptive pressure control based on the simulated annealing algorithm, disclosed by the invention, the gas pressure of the chamber of the atomic layer deposition equipment is controlled by adopting a self-adaptive control algorithm based on the simulated annealing algorithm, so that the gas pressure is kept in a set gas pressure range, and a preset gas pressure value can be rapidly achieved, therefore, not only can the atomic layer deposition equipment rapidly enter a stable working state, but also the waste of a chemical reagent can be reduced, the actual utilization rate is increased, the pollution of residual reagent on the gas reagent is reduced, the deposition reaction cycle time is shortened, and a film which has favorable performances, such as evenness, purity and thickness control can be obtained.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor equipment, and in particular to an atomic layer deposition equipment with adaptive pressure control based on a simulated annealing algorithm. Background technique [0002] In atomic layer deposition equipment, pressure control has always been a rather complicated issue. Each link of the deposition involves pressure control. Before the deposition starts, the deposition chamber needs to be inflated. The entire equipment is deposited during operation, and the pressure often needs to be maintained at Torr to Within the Torr range, but during the chemical reagent reaction stage of the deposition, the pressure of the deposition chamber will change. Depending on the reactants, the pressure may become larger or smaller, and the amount of pressure change is not fixed. Too large or small changes in air pressure may cause the working pressure of the chamber to be at with In addition, this may c...

AI Technical Summary

Problems solved by technology

All aspects of deposition involve the control of pressure. Before the deposition starts, the deposition chamber needs to be inflated. The entire equipment is deposited during work, and the air pressure often needs to be kept at Torr to Within the range of Torr, but during the chemical reagent reaction stage of deposition, the air pressure of the deposition chamber will change. Depending on the reactants, the air pressure may become larger or smaller, and the amount of change in the air pressure is not constant. Excessive or small changes in air pressure may cause the working air pressure of the chamber to be at and In addition, this may lead to changes in the rate at which the substrate adsorbs the precursor (or reacts with the precursor), and in a short period of time, the adsorption cannot reach saturation or the surface reaction is incomplete.

If the air pressure is too low or too high, the reaction of chemical reagents may be insufficient, which will lead to waste of reagents and lower utilization rate, and will also bring disadvantages to the cleaning process, prolonging the cleaning process, lengthening the reaction time of the deposition cycle, and affecting product quality. to guarantee

[0003] Therefore, no matter whether the air pressure is too high or too low, all possible unfavorable factors will destroy the self-limitation of atomic layer deposition, and the whole deposition process is no longer what we expect, and can only be regarded as a process similar to atomic layer deposition. Its deposition rate may increase or decrease with the increase of gas pressure

This will lead to uncontrollable deposition rate, which will ultimately affect the uniformity, purity and thickness control of the film.

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