Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof

A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as high doping concentration, hot carrier injection effect, etc., to reduce channel resistance and improve reliability performance, improving the effect of hot carrier effect

Active Publication Date: 2013-04-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main reason is that when a high voltage is applied to the drain terminal 9, the lateral electric field of the drift region 3 is stronger; the doping concentration of the drift region 3 under the polysilicon gate 5 is higher, so the lateral electric field is stronger, thereby causing severe heat-carrying current sub-injection effect

Method used

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  • Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof
  • Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof
  • Radio frequency LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof

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Embodiment Construction

[0017] see Figure 1i , which is the RF LDMOS device described in this application. Taking an n-type radio frequency LDMOS device as an example, there is a p-type lightly doped epitaxial layer 2 on a p-type heavily doped substrate 1 . The epitaxial layer 2 has an n-type heavily doped source region 8 , a p-type channel doped region 7 and an n-type drift region 3 which are side-contacted in sequence. There is an n-type heavily doped drain region 9 in the drift region 3 . A gate oxide layer 4 and a polysilicon gate 5 are arranged sequentially on the channel doped region 7 and the drift region 3 . The doping concentration of the drift region 3 is not uniform, and the doping concentration of the end of the drift region 3 in contact with the side of the channel doped region 7 (that is, the part of the drift region 3 below the gate oxide layer 4) is lower than that of the rest The doping concentration of part of the drift region 3 . There is a piece of silicon oxide 10 continuousl...

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Abstract

The invention discloses a radio frequency LDMOS (laterally diffused metal oxide semiconductor) device. The side surface of a channel doping region and the side surface of a drift region of the radio frequency LDMOS device are contacted; a gate oxide and a grid electrode are successively arranged above the channel doping region and the drift region; and the doping density of the part of the drift region, which is below the channel doping region, is smaller than the doping density of rest parts. The invention also discloses a manufacture method for the radio frequency LDMOS device. Because the doping density of the drift region is unevenly distributed, the hot carrier effect can be lowered while the low-conduction resistance is obtained.

Description

technical field [0001] The present application relates to a semiconductor device, in particular to an LDMOS device applied in the radio frequency field. Background technique [0002] RF LDMOS (Laterally Diffused MOS Transistor) devices are commonly used in RF base stations and broadcasting stations. The performance indicators pursued include high breakdown voltage, low on-resistance and low parasitic capacitance. [0003] see Figure 1i , which is an existing RF LDMOS device. Taking an n-type radio frequency LDMOS device as an example, there is a p-type lightly doped epitaxial layer 2 on a p-type heavily doped substrate 1 . The epitaxial layer 2 has an n-type heavily doped source region 8 , a p-type channel doped region 7 and an n-type drift region 3 which are side-contacted in sequence. The doping concentration of the drift region 3 is uniform. In the drift region 3 there is an n-type heavily doped drain region 7 . A gate oxide layer 4 and a polysilicon gate 5 are arran...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/10H01L29/06H01L21/336
Inventor 钱文生
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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