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Top emission OLED (Organic Light-Emitting Diode) and preparation method thereof

A luminescence and top-emission technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of display device application hindrance, content cannot be seen clearly, etc., and achieve the effects of easy manufacturing process, reduced reflection, and simple operation

Active Publication Date: 2013-04-17
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As an emerging flat panel display technology, it has surpassed the popular liquid crystal display technology on the market in many aspects, such as wide viewing angle, high brightness, low power consumption, high response speed, low cost, bright colors, etc., but OLED generally uses Metals with high reflectivity are used as cathode layer materials, but the cathode layer with high reflectivity hinders the application in display devices
As a display device, high contrast is a long-term pursuit of people, and the requirements for screen contrast are higher, because in sunlight, if the reflectivity of the display is high, the displayed content will not be seen clearly.

Method used

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  • Top emission OLED (Organic Light-Emitting Diode) and preparation method thereof
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  • Top emission OLED (Organic Light-Emitting Diode) and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0055] The structure of the top emission organic electroluminescent diode in the present embodiment 1 is: PET / Ag / m-MTDATA / NPB / (FIrPic:CBP) / Alq 3 / LiF / (Ag / Al:Alq 3 / CsF / Ag).

[0056] The preparation process of the top emission organic electroluminescent diode is as follows:

[0057] The PET film substrate was placed in deionized water containing detergent for ultrasonic cleaning, and after cleaning, it was treated with isopropanol and acetone in ultrasonic for 20 minutes, and then dried with nitrogen.

[0058] In a vacuum evaporation system, Ag with a thickness of 18 nm was deposited on the surface of the PET film as an anode layer, and then the anode layer was treated with oxygen plasma for 2 minutes.

[0059] After the treatment, continue to vapor-deposit a hole injection layer m-MTDATA with a thickness of 30nm, a hole transport layer NPB with a thickness of 40nm, and a light-emitting layer FIrPic:CBP with a thickness of 20nm (wherein, FIrPic is the guest material) on the s...

Embodiment 2

[0062] The structure of the top-emitting organic electroluminescent diode in this embodiment 2 is: PC / Al / m-MTDATA / NPB / (FIrPic:CBP) / Alq 3 / LiF / (Al / Li:Bphen / LiF / Al).

[0063] The preparation process of the top emission organic electroluminescent diode is as follows:

[0064] The PC film substrate is placed in deionized water containing detergent for ultrasonic cleaning, and after cleaning, it is treated with isopropanol and acetone in ultrasonic for 20 minutes, and then blown dry with nitrogen.

[0065] In a vacuum evaporation system, Al with a thickness of 20 nm was deposited on the surface of the PC film as an anode layer, and then the anode layer was treated with oxygen plasma for 5 minutes.

[0066] After the treatment, continue to vapor-deposit a hole injection layer m-MTDATA with a thickness of 30nm, a hole transport layer NPB with a thickness of 40nm, and a light-emitting layer FIrPic:CBP with a thickness of 20nm (wherein, FIrPic is the guest material) on the surface of ...

Embodiment 3

[0069] The structure of the top emission organic electroluminescent diode of the present embodiment 3 is: PI / Ag / m-MTDATA / NPB / (FIrPic:CBP) / Alq 3 / LiF / (Al / Cs:TPBi / CsF / Al-Ag).

[0070] The preparation process of the top emission organic electroluminescent diode is as follows:

[0071] Put the PI film substrate in deionized water containing detergent for ultrasonic cleaning. After cleaning, it was treated with isopropanol and acetone in ultrasonic for 20 minutes, and then dried with nitrogen.

[0072] In a vacuum evaporation system, Ag with a thickness of 25 nm was deposited on the surface of the PI film as an anode layer, and then the anode layer was treated with oxygen plasma for 2 minutes.

[0073] After the treatment, continue to vapor-deposit a hole injection layer m-MTDATA with a thickness of 30nm, a hole transport layer NPB with a thickness of 40nm, and a light-emitting layer FIrPic:CBP with a thickness of 20nm (wherein, FIrPic is the guest material) on the surface of the ...

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Abstract

The invention belongs to the field of photoelectronic devices and discloses a top emission OLED (Organic Light-Emitting Diode) and a preparation method thereof. The top emission OLED comprises a substrate, an anode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, a first electron injection layer and a cathode layer which are sequentially laminated, wherein the cathode layer comprises a first metal layer, a medium layer, a second electron injection layer and a second metal layer which are sequentially laminated. According to the top emission OLED provided by the invention, the structure of the cathode layer adopts a metal layer / medium layer / electron injection layer / metal layer structure; and the structure can reduce reflection of the environment for light and improve contrast of the top emission OLED which is used as a display.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a top-emitting organic electroluminescent diode. The invention also relates to a preparation method of the top emission organic electroluminescent diode. Background technique [0002] Organic Light Emission Diode (OLED for short) has the characteristics of high brightness, wide range of material selection, low driving voltage, full-cure active light emission, etc. It also has high definition, wide viewing angle, and high-speed display that can smoothly display animations. Response and other advantages, and OLED devices can be made into flexible structures, which can be folded and bent. It is a very potential flat panel display technology and flat light source, which meets the development trend of mobile communication and information display in the information age, as well as the requirements of green lighting technology. , is a very popular research field in the last ten ye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/50H01L51/56
Inventor 周明杰王平冯小明钟铁涛
Owner OCEANS KING LIGHTING SCI&TECH CO LTD