Etching and baking equipment and operation method thereof

Abstract

The invention relates to etching and baking equipment and an operation method thereof. The etching and baking equipment comprises a reaction furnace containing objects required to be baked, a lifting device which is arranged below the reaction furnace and used for lifting the objects, a laminar cooling device used for cooling the objects in a lifting process, a first cooling assembly, a heat exchanger, an air blower and a second cooling assembly, wherein the first cooling assembly is arranged inside the reaction furnace and comprises a circulating air cooling system and a water cooling system, the circulating air cooling system produces introduced air flow and carries out cooling, the water cooling system produces introduced cooling water and carried out the cooling; and the second cooling assembly is arranged outside the reaction furnace and comprises a ventilation pipeline which connects the circulating air cooling system, the heat exchanger and the air blower into a ventilation circuit. The etching and baking equipment provided by the invention is optimized in layout and compact in structure, growth yield of MOCVD (metal organic chemical vapour deposition) epitaxial wafers and repeated utilization factor of a substrate can be improved, and floor space is small and working efficiency is high, so that the etching and baking equipment is convenient for industrial application and popularization.

Description

technical field [0001] The present invention relates to an etching and baking equipment and its operating method, more specifically, to a layout design of a chlorine or chloride etching and baking equipment and its operating method. Background technique [0002] Metal Organic Chemical Vapor Deposition (MOCVD for short) conducts chemical deposition reactions on substrates by means of thermal decomposition reactions to grow thin-layer single crystal materials of various III-V, II-VI compound semiconductors and their multiple solid solutions. The graphite disk is used as a supporting platform for the substrate, and excess chemical reaction residues will be deposited on the surface of the graphite disk during the reaction. If these residues are not removed, it will affect the corresponding temperature control and surface particles during the growth process of a new batch of epitaxial wafers, and finally affect the yield of epitaxial wafer growth. [0003] At present, there is n...

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Problems solved by technology

If these residues are not removed, it will affect the corresponding temperature control and surface particles during the growth of a new batch of epitaxial wafers, and ultimately affect the yield of epitaxial wafer growth

[0003] At present, there is no special equipment for etching and cleaning MOCVD and epitaxial wafers on the market. The current cleaning method for graphite disks used in the industry usually uses a vacuum sintering furnace for long-term high-temperature baking, and there is a comparison of the baking time of a single furnace. Long time (about 14 hours for a single furnace), too high baking temperature (the highest temperature is about 1400 degrees), which affects the life of the graphite disk cycle, and it is impossible to etch the scrapped epitaxial substrate produced during the process of growth

In addition, this type of equipment is relatively large in size and occupies a relatively large installation and use space in the purification workshop.

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