Packaging substrate and packaging structure provided with supporting body and manufacture method thereof

Abstract

The invention discloses a packaging substrate and a packaging structure provided with a supporting body and a manufacture method thereof. The packaging substrate comprises the supporting body, a first electric contact pad arranged on the supporting body, a core layer of the first electric contact pad arranged on the supporting body in a burying mode, a circuit layer arranged on the core layer, a plurality of electric blind holes arranged in the core layer, and an insulation protective layer disposed on the core layer. Due to the fact that the supporting body is combined with one side of the packaging substrate, the packaging substrate is prevented from being broken during transportation or packaging because the packaging substrate is too thin.

Description

technical field [0001] The invention relates to a semiconductor packaging substrate, especially to a packaging substrate with a support body and its manufacturing method, and a packaging structure with the support body and its manufacturing method. Background technique [0002] With the vigorous development of the electronic industry, electronic products are gradually moving towards the trend of multi-function and high performance. In order to meet the packaging requirements of miniaturization of semiconductor packages, it is also developing towards reducing the thickness of the package substrate carrying the chip. At present, packaging substrates used for carrying chips can be divided into hard materials and soft materials. Generally, packaging substrates used for Ball Grid Array (BGA) packaging are multi-selectable hard materials. [0003] see Figure 1A to Figure 1D , is a schematic cross-sectional view of the manufacturing method of the conventional double-layer circuit...

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Problems solved by technology

[0009] However, as the demand for miniaturization increases, the core layer 13 with a thickness of 60 μm cannot meet the miniaturization requirements of the package. However, if the thickness of the core layer 13 is less than 60 μm, the total thickness R of the package substrate 1a will be less 130 μm, resulting in poor production workability, for example: the packaging substrate 1a is easy to get stuck when moving in each process operation station, which is not conducive to production, and even if it can be produced, it is easy to be warped due to too thin thickness during transportation or packaging or rupture, resulting in unusable or defective product

[0010] In addition, in order to facilitate the production of fine-pitch circuits, the thickness of the copper layers 11a, 11b is as thin as close to 3 μm, which makes it easy to be punctured by laser light.

In order to prevent the laser from penetrating through the copper layer 11a of the first surface 13a, the laser energy is usually reduced to increase the number of laser shots, which results in prolonging the process time and increasing the cost.

[0011] Moreover, in the manufacturing method of the existing packaging substrate 1a, because the depth of the through hole 130 is too deep, not only when making the conductive through hole 140, it will cause poor copper electroplating performance, resulting in a hole wrapping phenomenon, and When the insulating protective layer 15 is filled into the conductive via 140, it is easy to have a void phenomenon.

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