Positive-negative-positive transistor integrated with germanium-silicon hetero-junction negative-positive-negative transistor

Abstract

The invention discloses a positive-negative-positive (PNP) transistor integrated with a germanium-silicon hetero-junction negative-positive-negative (NPN) transistor. A base area out-leading area is arranged on the lateral face of an active area to lead out a base area so that the fact that polycrystalline silicon is formed on the top portion of the active area to lead out the base area can be avoided, and therefore the integration of the PNP transistor and the germanium-silicon hetero-junction NPN transistor can be realized without changing the manufacturing process of the germanium-silicon hetero-junction NPN transistor, influences to the manufacturing of the germanium-silicon hetero-junction NPN transistor are prevented from being produced, and the facts that manufacturing cost of germanium-silicon hetero-junction NPN transistor is not increased and yield of the germanium-silicon hetero-junction NPN transistor is not reduced are guaranteed.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit device, in particular to a PNP transistor integrated with a germanium-silicon heterojunction NPN transistor. Background technique [0002] For the Bipolar Field Effect Transistor (BiCMOS) process, as the complement of the NPN device, that is, the germanium-silicon heterojunction NPN transistor, the PNP device is also very important. PNP devices are generally divided into two types: lateral PNP and vertical PNP. Among them, the performance of the vertical PNP device is relatively high, which is also required in high-performance applications. However, the integration of vertical PNP devices and NPN devices is relatively difficult, or even impossible to integrate. The performance of the lateral PNP device is poor, but the integration of the device is relatively easy. [0003] Such as figure 1 As shown, it is a schematic structural diagram of an existing PNP transistor integrated with a german...

AI Technical Summary

Problems solved by technology

If the polysilicon in the emitter region 110 is etched first, and then the silicon germanium single crystal in the base region 111 and the silicon germanium polycrystal 108 are etched, the existing PNP triode integration cannot be realized.

Therefore, in order to realize the integration of the existing PNP transistor and the silicon-germanium heterojunction NPN transistor, it is necessary to change the manufacturing process of the existing germanium-silicon heterojunction NPN transistor, thereby affecting the production of the existing germanium-silicon heterojunction NPN transistor. , which affects the production cost and yield of the existing silicon-germanium heterojunction NPN transistor

Images