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Method for preparing patterned ZnO film by liquid phase self-assembly technology

A self-assembly technology and patterning technology, applied in the direction of zinc oxide/zinc hydroxide, etc., to achieve the effect of broad application prospects, low requirements for experimental conditions and simple process

Active Publication Date: 2013-05-01
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the preparation of ZnO thin films by self-assembly technology, it is in the stage of exploration, and the prepared ZnO thin films have not been observed to have dielectric properties.

Method used

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  • Method for preparing patterned ZnO film by liquid phase self-assembly technology
  • Method for preparing patterned ZnO film by liquid phase self-assembly technology
  • Method for preparing patterned ZnO film by liquid phase self-assembly technology

Examples

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Embodiment 1

[0032] A method for preparing a patterned ZnO thin film by liquid phase self-assembly technology, comprising the following steps:

[0033] Step 1: the configuration of the precursor liquid: the Zn(NO of 0.0025mol 3 ) 2 ·6H 2 O and 0.01mol of NH 4 Dissolve F in 50ml distilled water to form Zn(NO 3 ) 2 ·6H 2 O concentration is 0.05mol / L, NH 4 For a mixed solution with a F concentration of 0.2mol / L, use HNO with a concentration of 4mol / L 3 solution and a NaOH solution with a concentration of 3 mol / L to adjust the pH of the mixed solution to 5.5, and stir the mixed solution at room temperature until it is completely clear to obtain a precursor solution.

[0034] Step 2: Functionalization of the substrate: place the substrate in deionized water, acetone, and absolute ethanol for ultrasonic cleaning for 10 min. After irradiating with ultraviolet light for 20 minutes, soak in OTS-toluene solution with a volume concentration of 1% for 30 minutes to prepare OTS-SAMs film, dry O...

Embodiment 2

[0039] A method for preparing a patterned ZnO thin film by liquid phase self-assembly technology, comprising the following steps:

[0040] Step 1: the configuration of the precursor liquid: the Zn(NO of 0.0025mol 3 ) 2 ·6H 2 O and 0.0125 mol of NH 4 Dissolve F in 50ml distilled water to form Zn(NO 3 ) 2 ·6H 2 O concentration is 0.05mol / L, NH 4 For a mixed solution with a F concentration of 0.25mol / L, use HNO with a concentration of 4mol / L 3 solution and a NaOH solution with a concentration of 3 mol / L to adjust the pH of the mixed solution to 5.5, and stir the mixed solution at room temperature until it is completely clear to obtain a precursor solution.

[0041] Step 2: Functionalization of the substrate: place the substrate in deionized water, acetone, and absolute ethanol for ultrasonic cleaning for 10 min. After irradiating with ultraviolet light for 20 minutes, soak in OTS-toluene solution with a volume concentration of 1% for 30 minutes to prepare OTS-SAMs film, d...

Embodiment 3

[0046] A method for preparing a patterned ZnO thin film by liquid phase self-assembly technology, comprising the following steps:

[0047] Step 1: the configuration of the precursor liquid: the Zn(NO of 0.0025mol 3 ) 2 ·6H 2 O and 0.0150 mol of NH 4 Dissolve F in 50ml distilled water to form Zn(NO 3 ) 2 ·6H 2 O concentration is 0.05mol / L, NH 4 For a mixed solution with a F concentration of 0.3mol / L, use HNO with a concentration of 4mol / L 3 solution and a NaOH solution with a concentration of 3 mol / L to adjust the pH of the mixed solution to 5.5, and stir the mixed solution at room temperature until it is completely clear to obtain a precursor solution.

[0048] Step 2: Functionalization of the substrate: place the substrate in deionized water, acetone, and absolute ethanol for ultrasonic cleaning for 10 min. After irradiating with ultraviolet light for 20 minutes, soak in OTS-toluene solution with a volume concentration of 1% for 30 minutes to prepare OTS-SAMs film, dr...

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Abstract

The invention discloses a method for preparing a patterned ZnO film by a liquid phase self-assembly technology. Zn(NO3)2.6H2O and NH4F, as raw materials, are dissolved in distilled water to prepare precursor liquid; a substrate is dipped in OTS-toluene solution to prepare an OTS-SAMs; after being dried, the OTS-SAMs film is irradiated under ultraviolet light to obtain a substrate which is provided with a functionalized OTS-SAMs film on the surface; the surface of the substrate with the functionalized OTS-SAMs film is downwards suspended on the surface of the precursor liquid at the temperature of 70-80 DEG C, so that the functionalized OTS-SAMs film is contacted with the precursor liquid; an amorphous state ZnO film is prepared by depositing for 20 hours through the reverse absorption method; and after being dried, the amorphous state film is insulated at the temperature of 300 DEG C and is annealed to obtain the crystallized and patterned ZnO film. The method has simple technique and lower experimental condition requirements; and the obtained ZnO film is uniform and compact. The method is applied in the preparation of the patterned ZnO film, and has wide application prospects in the microelectronic field.

Description

【Technical field】 [0001] The invention belongs to the field of functional materials, and in particular relates to a method for preparing a patterned ZnO thin film by liquid phase self-assembly technology. 【Background technique】 [0002] In recent years, with the rapid development of information science and technology, wide-bandgap semiconductor materials have attracted people due to their potential applications in high-power and high-frequency devices, ultraviolet detectors, short-wavelength light-emitting diodes, lasers and related devices. widespread attention. As a third-generation semiconductor material, ZnO has the characteristics of large band gap, high electron drift saturation velocity, and small dielectric constant. It is a new type II-IV wide bandgap semiconductor material with a bandgap of 3.37eV, which is a typical direct wide bandgap semiconductor. This property makes it have a great application prospect in the field of optoelectronic devices. Moreover, the l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02
Inventor 谈国强杨薇任慧君
Owner SHAANXI UNIV OF SCI & TECH
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