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Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films

A technology of water polishing and composition, applied in the field of new water-containing polishing compositions, to achieve the effects of improved process management, excellent global and local flatness, and improved selectivity

Inactive Publication Date: 2013-05-01
BASF AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it only discloses the polishing of glass

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  • Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
  • Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
  • Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films

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preparation example Construction

[0130] The compositions of the present invention can be prepared without any particularity, but by dissolving or dispersing the abovementioned ingredients (A), (B) and (C) and optionally (D) and / or (E) in an aqueous medium, in particular performed in deionized water. For this purpose, customary and standard mixing methods and mixing equipment can be used, such as stirred tanks, in-line dissolvers, high-shear high-speed mixers, ultrasonic mixers, homogenizer nozzles or convective mixers. The composition of the invention thus obtained is preferably filterable through a filter having suitable mesh openings to remove coarse-grained particles such as agglomerates or aggregates of finely divided solid abrasive particles (A).

[0131] The compositions of the invention are well suited for the methods of the invention.

[0132] In the method of the invention, the substrate material of electronic, mechanical and optical devices, especially electronic devices, most preferably integrated...

Embodiment 1

[0149] Preparation of Aqueous Polishing Compositions 1-6

[0150] To prepare aqueous polishing compositions 1-6, cerium oxide (average particle size d as measured by dynamic laser light scattering) 50 120-140nm), polyethylene glycol (PEG 10K ; weight average molecular weight: 10,000) and sodium hexametaphosphate (PP; weight ratio of cerium oxide to PP=200, hereinafter referred to as PP 200 ) dispersed or dissolved in ultrapure water. The amounts used are summarized in Table 1.

[0151] Table 1: Composition of Aqueous Polishing Compositions 1-6

[0152] Composition number

[0153] 4 (comparative example)

Embodiment 2 and 3 and comparative Embodiment C1-C4

[0155] CMP of a polysilicon layer on a silicon semiconductor wafer

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Abstract

An aqueous polishing composition has been found, the said aqueous polishing composition comprising (A) at least one type of abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) at least one water-soluble polymer selected from the group consisting of linear and branched alkylene oxide homopolymers and copolymers; and (C) at least one anionic phosphate dispersing agent; and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.

Description

[0001] The present invention relates to a novel aqueous polishing composition particularly suitable for polishing semiconductor substrates comprising silicon oxide dielectrics and polysilicon films, optionally comprising silicon nitride films. [0002] Furthermore, the present invention relates to a novel method of polishing substrates for the manufacture of electronic, mechanical and optical devices, said substrate materials comprising silicon oxide and polysilicon films, and optionally silicon nitride films. Citation [0003] Documents cited in this application are incorporated by reference in their entirety. Background of the invention [0004] Chemical-mechanical planarization or polishing (CMP) is the primary method for achieving local and global flatness of integrated circuit (IC) devices. This technique typically employs a CMP composition or slurry containing abrasives and other additives as the active chemistry between the rotating substrate surface and the polishing ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09G1/04C09G1/18C09K3/14
CPCC09G1/02H01L21/31053C09K3/1463C09K13/00C09K3/14C09G1/18H01L21/3105
Inventor Y·李J-J·初S·S·文卡塔拉曼W·L·W·基乌H·W·平德尔
Owner BASF AG
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