Method of manufacturing field termination type insulated gate bipolar translator (IGBT) component with substrate provided with outward-extending layer

Abstract

The invention discloses a method of manufacturing a field termination type insulated gate bipolar translator (IGBT) component with a substrate provided with an outward-extending layer. The method comprises the steps of selecting the substrate provided with the outward-extending layer, and manufacturing a front face structure of the IGBT component on the front face of outward-extending layer until depositing front face metal as an emission electrode; thinning the silicon base from the back face, forming a p-shaped heavy doping field blocking-up zone on the back face of the silicon base through technology of injecting ions, and depositing metal on the back face of the p-shaped heavy doping field blocking-up zone to form a collector. The method of manufacturing the IGBT component with the substrate provided with the outward-extending layer does not need production technology for extremely thin slices with thickness less than 70 nanometers, thereby effectively reducing the slice breaking rate of slice technology, and saving enormous cost of purchasing new machines and equipment.

Description

technical field [0001] The invention relates to a method for manufacturing an IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) device. Background technique [0002] The IGBT device is composed of a MOS transistor and a PNP bipolar transistor, and can also be regarded as composed of a VDMOS (Vertical double diffused MOSFET, vertical double diffused MOS transistor) and a diode. [0003] see figure 1 , which is a structural schematic diagram of a field stop (Field stop) IGBT device. On the back of the silicon wafer is a metal layer 14 as a collector, above which there is a p-type heavily doped collector region 4, further upward is an n-type heavily doped field blocking region 3, and further upward is an n-type medium and low doped region 1. There is a p well 7 in the n-type medium and low doping region 1 . The p well 7 has an n-type heavily doped source region 8 and a p-type heavily doped contact region 11 . There is a gate oxide layer 5 , an int...

AI Technical Summary

Problems solved by technology

[0011] The general-purpose equipment of semiconductor manufacturers is used to process silicon wafers with a standard thickness (generally 725 μm), and there is a greater risk of silicon wafer breakage when handling extremely thin slices

And repurchasing equipment that can handle extremely thin sheets will greatly increase the cost and affect the overall production capacity

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