Preparing heterojunction solar cell method of combining wet process deposition with low temperature heat treatment
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A low-temperature heat treatment, solar cell technology, applied in the direction of circuits, electrical components, final product manufacturing, etc., can solve the problems of cumbersome process steps, complicated methods, increased fragmentation rate, etc., and achieve the effect of reducing costs
Active Publication Date: 2013-06-05
ZHONGWEI NEW ENERGY CHENGDU CO LTD
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[0021] However, this method is relatively complicated, and the process steps involved in the industrialization process are cumbersome, which may easily lead to a decrease in the yield rate and an increase in the fragmentation rate
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Embodiment 1
[0075] Example 1. Please see attached image 3
[0076] (a) forming a transparent conductive thin film layer on the heterojunction solar cell substrate, the substrate includes preparing a heterojunction solar cell on an n-type or p-type substrate, and depositing a transparent conductive thin film transparent thin film includes a Or a combination of several types, which can be deposited by PECVD, PVD, RPD, etc., with a thickness between 1nm and 1um.
[0077] The process steps of the transparent conductive thin film layer are:
[0078] a) Removal of damage and surface texturing of the crystalline silicon substrate;
[0079] b) Depositing an intrinsic amorphous silicon layer (i-type a-Si), about 0-50nm;
[0080] c) Depositing an n-type amorphous silicon layer (n-type a-Si), about 1-50nm;
[0081] d) Depositing an intrinsic amorphous silicon layer (i-type a-Si), about 0-50nm;
[0082] e) Depositing a p-type amorphous silicon layer (p-type a-Si), about 1-50nm;
[0083] f) Dep...
Embodiment 2
[0091] Example 2 (see Figure 4 )
[0092] Similar to Example 1, the present invention can also be used for double-sided electroplating of heterojunction solar cells, the specific process is as follows Figure 4 Shown is the derivation of embodiment 1, also belongs to the scope of technical protection of the present invention.
[0093] Steps (a)-(b) and steps (d) and (f) are similar to embodiment 1, step (e) does not need, and step (c) is:
[0094] (c) The metal grid lines are formed by double-sided wet deposition. Prepare metal grid lines at the opening of the mask and on the transparent conductive layer by electrodeposition, light-induced deposition, chemical deposition or a combination thereof, including Ni, Cu, Ag, Au, Cr, Pb, Sn, In, Bi, Metals such as Zn, Co, Cd, Sb or Tl and their combinations or alloys; since the mask is insulating, the deposition of metal is only carried out at the opening of the mask and on the transparent conductive layer, thereby forming the pat...
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Abstract
The invention relates to a preparing heterojunction solar cell method of combining wet process deposition with low temperature heat treatment. The preparing heterojunction solar cell method of combining the wet process deposition with the low temperature heat treatment is characterized in that metal grate lines are deposited on a single-face transparent conducting layers or a double-face transparent conducting layers, the low temperature heat treatment is conducted to alloying, wherein (1) the metal grate lines at least comprise metal contact layers, metal conducting layers and metal welding layers, the metal contact layers are located on the transparent conducting layers, and the metal conducting layers, and the metal welding layers are located on the metal contact layers in sequence; (2) the wet process deposition comprises electro-deposition, or light induction deposition, or chemical deposition, or the combination of the electro-deposition, and the light induction deposition and the chemical deposition ; (3) the low temperature heat treatment alloying can form good contact and adhesion property. The preparing heterojunction solar cell method of combining the wet process deposition with the low temperature heat treatment has the advantages that the metal grate lines which have no silvers or little silvers are achieved, cost is reduced, and the low temperature heat treatment is matched with existing heterojunction solar cell processing. In a word, preparing heterojunction solar cell method of combining the wet process deposition with the low temperature heat treatment has no seed layer electrofacing, the metal layers are metal or alloy which have specific temperature characteristic, the good contact and the adhesion property can be formed with transparent conducting films under the heat treatment temperature of 250 DEG C.
Description
technical field [0001] The invention relates to a method for preparing heterojunction solar cells by combining wet deposition and low temperature heat treatment, more precisely, a method for preparing heterojunction solar cells based on wet deposition of metal grid lines and then low temperature heat treatment (low temperature sintering). The battery method belongs to the field of heterojunction solar cells. Background technique [0002] With the development of society and economy, the demand for energy continues to increase, and the energy crisis intensifies; while the consumption of energy has caused serious damage to the ecological environment, and the contradiction between the two has become increasingly prominent. In order to realize the sustainable development of social economy, renewable energy and clean energy will play an increasingly important role. As the most important energy source in the 21st century, solar energy has become a research and development hotspot ...
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