Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A paste composition for a solar cell electrode

A technology of solar cells and compositions, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of high resistance value of anti-reflection film

Inactive Publication Date: 2013-06-12
NORITAKE CO LTD
View PDF10 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The above-mentioned anti-reflection film has a high resistance value, so it becomes an obstacle to efficiently extract the power generated at the pn junction of the semiconductor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A paste composition for a solar cell electrode
  • A paste composition for a solar cell electrode
  • A paste composition for a solar cell electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. Furthermore, in the following embodiments, the drawings are appropriately simplified or deformed, and the dimensional ratios, shapes, etc. of each part are not necessarily accurately drawn.

[0052] figure 1 It is a diagram schematically showing a cross-sectional structure of a solar cell module 12 having a silicon-based solar cell 10 to which a conductive composition according to an example of the present invention is applied. exist figure 1 Among them, the solar cell module 12 has: the above-mentioned solar cell 10, a package 14 encapsulating the solar cell 10, a surface glass 16 provided on the package 14 on the light-receiving surface side, and a 14 and set the protective film (ie the rear plate) 18. The above-mentioned package 14 is a package made of, for example, EVA, and a cross-linking agent, an ultraviolet absorber, an adhesive protecting agent, an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
softening pointaaaaaaaaaa
softening pointaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention provides a paste composition for a solar cell electrode. According to the invention, the intrusion amount of electrode material can be easily controlled even when electrodes are formed in n layers of thin solar cells of a shallow emitter structure with a firing holing method and high-efficiency solar cells with high FF value and less current leakage can be obtained. An illuminated surface electrode is formed by thick film silver comprising, by weight, 1-10 parts of lead glass with respect to 100 parts of silver. The lead glass contains 6-62 mole% of PbO, 1-18 mole% of B2O3, 8-49 mole% of SiO2, 0-30 mole% of A12O3, 1-30 mole% of Li2O, 1-30 mole% of TiO2, 0-30 mole% of ZnO, 0-1.0 mole% of ZrO2 and 0-6 mole% of P2O5 and thus the intrusion quantity is controlled to be 80-90nm. Therefore, even the line width is reduced to be 100 microns, favorable ohmic contact can be obtained and photoelectric conversion efficiency of the solar cells can be improved.

Description

technical field [0001] The present invention relates to a conductive paste composition suitable for solar cell electrodes formed by a fire through method. Background technique [0002] For example, a general silicon-based solar cell has a structure in which an n-layer formed on the upper surface of a silicon substrate, which is a p-type polycrystalline semiconductor, doped with a donor element such as phosphorus, has an antireflection film and a light-receiving surface. electrode, and, on its lower surface separated by p + The layer includes a back electrode (hereinafter, simply referred to as an "electrode" when not distinguishing between them), and the electric power generated at the pn junction of the semiconductor by light reception is taken out through the electrode. The above-mentioned anti-reflection film is a film for ensuring sufficient visible light transmittance and improving light receiving efficiency by reducing surface reflectance, and is composed of a thin fi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/02H01L31/0224
CPCY02E10/50
Inventor 青山贵征吉野泰阪本树
Owner NORITAKE CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com