Hybrid memory device, and control method and preparation method thereof

A technology of mixed storage and control methods, applied in static memory, digital memory information, information storage, etc., can solve the problem that users cannot choose flexibly, and achieve the effect of being conducive to wide promotion and application, reducing cost and improving performance

Active Publication Date: 2013-06-19
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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Problems solved by technology

[0007] In the process of realizing the present invention, the applicant realized that the existing technology has the following technical defects: the traditional storage array can only implement one storage method, and cannot flexibly choose according to user needs

Method used

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  • Hybrid memory device, and control method and preparation method thereof
  • Hybrid memory device, and control method and preparation method thereof
  • Hybrid memory device, and control method and preparation method thereof

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Embodiment Construction

[0026] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail with reference to specific embodiments and drawings. Although this article may provide an example of a parameter containing a specific value, it should be understood that the parameter need not be exactly equal to the corresponding value, but can be approximated to the value within acceptable error tolerances or design constraints.

[0027] In an exemplary embodiment of the present invention, a hybrid memory device is proposed. Figure 3A It is a schematic diagram of the connection relationship of the hybrid storage device according to the embodiment of the present invention. Such as Figure 3A As shown, the hybrid memory device of this embodiment includes: a resistive memory cell (RRAM cell) and a ferroelectric memory cell (FeRAM cell); the RRAM cell is formed on the drain of the FeRAM cell. Among them, the ...

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Abstract

The invention discloses a hybrid memory device, and a control method and a preparation method thereof. The hybrid memory device comprises a ferroelectric memory cell and a resistance random access memory cell formed on a drain electrode of the ferroelectric memory cell. The hybrid memory device is switched between the two memory modes. In a first memory mode, the resistance random access memory cell is used as a memory module and the ferroelectric memory cell is used as a gating module; and in a second memory mode, the resistance random access memory cell is in a low resistance state and the ferroelectric memory cell is used as used as the memory module. The hybrid memory device takes the advantages of a FeRAM memory mode and an RRAM memory mode comprehensively and two different modes are realized on a single chip, thereby meeting memory needs of different modes.

Description

Technical field [0001] The present invention relates to the technical field of memory in the microelectronics industry, and in particular to a hybrid storage device that can realize the combination of two storage modes-ferroelectric storage mode and resistive storage mode, and a control method and preparation method thereof. Background technique [0002] The current semiconductor memory market is represented by volatile dynamic random access memory (DRAM) and static random access memory (SRAM) and non-volatile "flash memory" memory (Flash). With the development and popularization of various portable digital products such as mobile storage devices, mobile communication devices, and digital cameras, the market’s demand for non-volatile data storage has further increased. In order to improve storage density and data storage reliability, based on traditional floating gates Structured Flash memory is facing severe challenges. For this reason, the industry has conducted a lot of resea...

Claims

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Application Information

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IPC IPC(8): G11C11/22
CPCG11C13/0002G11C11/005G11C11/22
Inventor 刘明许中广霍宗亮朱晨昕谢常青
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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