Thin film transistor and manufacturing method of thin film transistor
A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as current hysteresis, difficult silicon-based production lines, and device stability deterioration, and achieve reduced threshold voltage and reduced Production cost, effect of improving stability
Inactive Publication Date: 2013-06-19
SHANGHAI UNIV
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Problems solved by technology
[0004] Traditionally, insulating layers with high dielectric constants (such as TiO 2 、 Ta 2 o 5 , HfO 2 etc.) instead of conventional SiO 2 、Si 3 N 4 Insulating layer, although it can greatly reduce the threshold voltage of TFT devices, oxide thin film transistors based on insulating layers with high dielectric constants tend to produce current hysteresis, resulting in poor stability of the device
In addition, the production cost of the insulating layer with high dielectric constant is often relatively high, and it is difficult to be compatible with the traditional silicon-based production line, which is not conducive to practical application
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[0033] The specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0034] figure 1 is a schematic diagram of the structure of a thin film transistor in an embodiment. The thin film transistor includes a substrate 100 , a first gate 200 , an insulating layer 300 , an active layer 400 , a source 500 , a drain 600 and a second gate 700 arranged in sequence. There is a back channel region between the source 500 and the drain 600 , and the second gate 700 is formed in the back channel region.
[0035] In this embodiment, the material of the substrate 100 is any one of silicon wafer, glass or ceramics.
[0036] The first gate 200 is selected from gold (Au), aluminum (Al), copper (Cu), molybdenum (Mo), chromium (Cr), titanium (Ti), indium tin oxide (ITO), tungsten (W), silver ( Any one or more of Ag), tantalum (Ta), prepared by sputtering or vacuum evaporation. The thickness of the first gate 200 ...
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The invention relates to a thin film transistor and a manufacturing method of the thin film transistor. The thin film transistor comprises a base plate, a first grid electrode, an insulating layer, an active layer, a source electrode, a drain electrode and a second grid electrode, wherein the base plate, the first grid electrode, the insulating layer, the active layer, the source electrode, the drain electrode and the second grid electrode are arranged in sequence. A back channel trench area is arranged between the source electrode and the drain electrode, and the second grid electrode is formed in the back channel trench area. According to the thin film transistor and the manufacturing method of the thin film transistor, a layer of the second grid electrode is additionally arranged in the back channel trench area. A floating gate structure is adopted to control charge distribution in the back channel trench area, and thereby a threshold voltage of a device is adjusted. The threshold voltage of the thin film transistor device is reduced, and a low-power-consumption oxide thin film oxide display device is achieved. The stability of the device is improved, and the manufacturing cost of the device is lowered.
Description
【Technical field】 [0001] The invention relates to a thin film transistor and a manufacturing method thereof. 【Background technique】 [0002] With the development of society, display devices have become an indispensable product in people's work and life. Due to the inherent bulkiness and relatively high power consumption of traditional CRT monitors, they have withdrawn from many application fields. Instead, the flat panel display technology (FPD) has shown strong vitality. In order to obtain the best performance, flat panel display devices often require active matrix to assist driving, that is, active circuits are integrated in each array unit to solve various problems in device driving. The core component of the active matrix is a thin film transistor (Thin Film Transistor, TFT). [0003] Compared with traditional silicon-based TFTs, thin-film transistors have the advantages of high mobility, simple manufacturing process, and transparency in the visible light band, and ...
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IPC IPC(8): H01L29/423H01L29/786H01L21/285H01L21/336
Inventor 李俊周帆林华平张建华蒋雪茵张志林
Owner SHANGHAI UNIV