Aluminum oxide film containing ta
A kind of aluminum oxide, thin film technology, used in ion implantation plating, coating, metal material coating process and other directions
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Embodiment 1
[0080] In this example, the Ta content of the sputtering target was changed for comparative study in order to examine the effect of increasing the film formation rate by the addition of Ta and the influence of the addition of Ta on the wet etching property. According to the following method, a Ta-containing alumina thin film containing the same amount of Ta as the Ta content of the sputtering target used was obtained.
[0081] Specifically, various sputtering targets [Al—Ta sputtering target (remainder: unavoidable impurities)] shown in Table 1 were manufactured by the following method.
[0082] First, a Ta-containing Al alloy preform was obtained under the following spray foaming conditions.
[0083] (spray foaming conditions)
[0084] Melting temperature: 1300°C
[0085] Atomizing gas: nitrogen
[0086] Gas / Metal Ratio: 7Nm 3 / kg
[0087] Spray distance: 1050mm
[0088] Gas atomization outlet angle: 1°
[0089] Collector Angle: 35°
[0090] Next, the obtained preform...
Embodiment 2
[0124] In this example, the oxygen flow rate ratio during sputtering was changed, and the improvement effect of the film formation rate by the addition of Ta was compared and examined.
[0125] Specifically, an Al-1.5% Ta sputtering target (remainder: unavoidable impurities) and a pure Al sputtering target containing 1.5 atomic % of Ta were produced in the same manner as in Example 1 above. Next, the oxygen flow rate ratio [the ratio of the oxygen flow rate (sccm) to the total flow rate (sccm) of Ar gas and oxygen gas) was changed in the range of 0 to 0.6 in the manner shown in Table 2, and the DC magnetron was performed simultaneously. Except sputtering to make the film thickness about 600 nm, each thin film was formed in the same manner as in Example 1 above, and the average film formation rate and film formation rate ratio were calculated in the same manner as in Example 1 above. Also in this example, a Ta-containing alumina thin film containing Ta in the same amount as the...
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