Thermal field of monocrystalline silicon manufacturing device
A technology for manufacturing devices and single crystal silicon, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of supercooling of components and difficult to increase temperature gradient, and achieve the effect of reducing the scouring effect
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[0012] The present invention will be further described below according to the accompanying drawings and in conjunction with the embodiments.
[0013] like figure 1 The thermal field of the monocrystalline silicon manufacturing device shown includes a furnace wall 7, a quartz crucible 3, a graphite crucible 5, a graphite heater 4, and a graphite spacer 6. The quartz crucible 3 is placed in the graphite crucible 5, and the graphite heater 4 is set Around the graphite crucible 5; the graphite spacer 6 is set on the inner wall of the furnace wall 7, and the graphite heater 4 is surrounded in the inner space; the rod-shaped single crystal silicon 1 is pulled out from the molten silicon 2 in the quartz crucible 3. The top of the quartz crucible 3 is provided with a conical gas guide hood 8. In the present invention, the gas guide hood 8 is as figure 2 As shown, it is made of high-purity graphite and is a combination of upper and lower cones. The small ends of the upper and low...
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