Thermal field of monocrystalline silicon manufacturing device

Abstract

The invention discloses a thermal field of a monocrystalline silicon manufacturing device, which comprises a furnace wall, a quartz crucible, a graphite crucible, a graphite heater, a graphite spacer bush. The quartz crucible is disposed inside the graphite crucible. The graphite heater is disposed around the graphite crucible. The graphite spacer bush is sleeved to the inner side of the furnace wall and encloses thee graphite heater inside an inner space of the graphite spacer. A conical guide hood is arranged above the quartz crucible. The thermal field of the monocrystalline silicon manufacturing device is characterized in that the guide hood is formed by an upper cone and a lower cone, and the upper cone and the lower cone are hermetically connected at the lower ends and are smoothly connected via an arc face. The hole diameter D1 of the large end of the upper cone is larger than the hole diameter D3 of the larger end of the lower cone. The guide hood formed by the upper cone and the lower cone helps to increase longitudinal temperature gradient nearby a solid-liquid interface and maintain not fast cooling speed of crystal nearby a growth interface, and in addition, scouring action of protective gases on the growth interface can be evidently reduced.

Description

technical field [0001] The invention relates to a thermal field of a monocrystalline silicon manufacturing device, in particular, the invention relates to a thermal field of a monocrystalline silicon device manufactured by a Czochralski method. Background technique [0002] In a single crystal silicon manufacturing device that uses the Czochralski method to manufacture single crystal silicon, the thermal field plays a crucial role in the growth of single crystal silicon. The thermal field of the existing monocrystalline silicon device includes a furnace wall, a quartz crucible, a graphite crucible, a graphite heater, and a graphite spacer. The quartz crucible is placed in the graphite crucible, and the graphite heater is arranged around the graphite crucible; The inner wall of the wall encloses the graphite heater in its inner space. The thermal field of the single crystal silicon device in the prior art can be used to grow lightly doped single crystal silicon, but it canno...

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Problems solved by technology

[0003] Aiming at the deficiencies of the prior art, the present invention proposes a method that can solve the problems that the temperature gradient near the growth interface is difficult to increase and components are prone to overcooling, and the thermal field of a single crystal silicon manufacturing device that grows heavily doped N-type single crystal silicon

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