A kind of preparation method of single crystal cubic carbon nitride thin film

Abstract

The invention relates to a carbon nitride preparation technology, and concretely relates to a mono-crystalline cubic carbon nitride film preparation method. The preparation method comprises the following steps: disposing a silicon substrate in the reaction chamber of an atomic layer deposition apparatus; letting a first reaction precursor containing carbon and nitrogen elements in the reaction chamber of the atomic layer deposition apparatus, and carrying out chemical adsorption of carbon and nitrogen atoms on the surface of the silicon substrate; carrying out an oxidation reaction to make the surface of the silicon substrate form a hydroxy structure; dehydrating the hydroxy structure at a high temperature to form an N-O-C structure; letting in a second reaction precursor, and carrying out a reduction reaction to reduce the O element and form a corresponding byproduct until the carbon and nitrogen atoms on the surface of the silicon substrate completely spontaneously form bonds; and repeating the above steps to form a mono-crystalline cubic carbon nitride film on the surface of the substrate. The preparation method, which allows the carbon and nitrogen elements to be simultaneously deposited and utilizes the reductibility of hydrogen to realize the growth of the film, has the advantages of simple operation, high conversion rate and small energy consumption, and the mono-crystalline cubic carbon nitride film prepared through the method has a complete structure.

Description

technical field [0001] The invention relates to a preparation technology of carbon nitride, in particular to a preparation method of a single crystal cubic carbon nitride film. Background technique [0002] Since it was proposed at the end of the last century that a metastable phase β-C whose hardness may exceed that of diamond 3 N 4 Since then, the study of this material has been a research hotspot in materials science. Later, scientists successively calculated C 3 N 4 The other several phases of α-phase, cubic phase, quasi-cubic phase and graphite-like phase. Except for graphite-like phase, the other phases of these five phases are harder than diamond. The principle is that the carbon in carbon nitride is sp 3 It is formed by hybridization, which is the same as the hybridization of carbon in diamond, and the carbon-nitrogen bond in carbon nitride is shorter than the carbon-carbon bond in diamond, and the bond energy is large, so carbon nitride is harder than diamond. ...

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Problems solved by technology

But to turn carbon nitride from theory into reality, scientists have tried many methods, such as plasma-assisted chemical vapor deposition, reactive sputtering, laser ablation, etc., but most of the carbon nitride films produced are Amorphous structure, the reason is that when the five kinds of crystals are the same, the disordered growth will lead to the amorphous structure of the final film

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