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A method for preparing Si-based tasi2 nano-tip arrays

A nano-tip and cone array technology, applied in chemical instruments and methods, self-regional melting method, single crystal growth, etc., can solve the problems of poor field emission performance and high manufacturing cost of the cone array

Active Publication Date: 2016-04-06
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to overcome the shortcomings of high manufacturing cost and poor field emission performance of the obtained cone array in the prior art, the present invention proposes a method for preparing Si-based TaSi 2 Nanotip Array Method

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  • A method for preparing Si-based tasi2 nano-tip arrays
  • A method for preparing Si-based tasi2 nano-tip arrays
  • A method for preparing Si-based tasi2 nano-tip arrays

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Embodiment 1

[0027] This embodiment is a preparation of Si-based TaSi 2 Nanotip array method. In this example, Si-TaSi is prepared in situ by melting and directional solidification technology in a crucible-free laser suspension zone. 2 Nanoeutectic autogenous composites using HNO 3 / HF etching solution to prepare evenly distributed TaSi on Si substrate 2 Nano-tip array, its concrete process comprises the following steps:

[0028] Step 1, prepare Si-TaSi 2 Eutectic autogenous composite sample bar: using existing techniques to prepare Si-TaSi 2 Eutectic autogenous composites were ingot cast and directional solidified by laser levitation method to obtain TaSi 2 Sample bars uniformly distributed on the Si substrate. specifically is:

[0029] Using Si with a purity of 99.996% and Ta with a purity of 99.999% as raw materials, put the Si base material and Ta base material prepared according to the eutectic composition into a quartz crucible and place it in a melting furnace. Vacuum the sm...

Embodiment 2

[0037] This embodiment is a preparation of Si-based TaSi 2 Nanotip array method. In this example, Si-TaSi is prepared in situ by melting and directional solidification technology in a crucible-free laser suspension zone. 2 Nanoeutectic autogenous composites using HNO 3 / HF etching solution to prepare evenly distributed TaSi on Si substrate 2 Nano-tip array, its concrete process comprises the following steps:

[0038] Step 1, prepare Si-TaSi 2 Eutectic Autogenous Composite Bars: Preparation of the Si-TaSi 2 The process of the eutectic self-generated composite material sample rod is the same as the process of step 1 in the first embodiment.

[0039] Step 2, prepare corrosion solution

[0040] The total amount of the corrosive solution is 120ml, and the concentration is 65%HNO 3 It is formulated with a concentration of 40% HF. HNO 3 : HF=5:2, the HNO 3 The ratio to HF is the volume ratio. The weighed HNO 3 Put it in a high-density polyethylene bottle with HF and mix e...

Embodiment 3

[0045] This embodiment is a preparation of Si-based TaSi 2 Nanotip array method. In this example, Si-TaSi is prepared in situ by melting and directional solidification technology in a crucible-free laser suspension zone. 2 Nanoeutectic autogenous composites using HNO 3 / HF etching solution to prepare evenly distributed TaSi on Si substrate 2 Nano-tip array, its concrete process comprises the following steps:

[0046] Step 1, prepare Si-TaSi 2 Eutectic Autogenous Composite Bars: Preparation of the Si-TaSi 2 The process of the eutectic self-generated composite material sample rod is the same as the process of step 1 in the first embodiment.

[0047] Step 2, prepare corrosion solution

[0048] The total amount of the corrosive solution is 120ml, and the concentration is 65%HNO 3 It is formulated with a concentration of 40% HF. HNO 3 : HF=5:1, the HNO 3 The ratio to HF is the volume ratio. The weighed HNO 3 Put it in a high-density polyethylene bottle with HF and mix e...

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Abstract

The invention relates to a method for preparing a Si-matrix TaSi2 nano pointed conical array. The method comprises steps of: adopting a laser levitation zone-melting directional solidification method for directional solidification, and thus obtaining TaSi2 test bars which are uniformly distributed on a Si matrix; and utilizing an HNO3 / HF corrosive liquid to prepare a TaSi2 pointed conical array on the surface of a sample through an etching method. The obtained TaSi2 nano pointed conical array has the height of 2.5-7.5 micrometers and the curvature radius of 54-140nm, and the length / radius ratio of the array reaches 35:1. TaSi2 on the prepared Si matrix has good uniformity, the surface density of the TaSi2 is 1.4*10<7> rod / cm<2>, and the diameter of the TaSi2 reaches a nano scale. Compared with the array with the length / radius ratio of 2:1, the array is greatly improved in field emission and can be applied to field emission display devices and devices such as field effect diodes, flat panel displays, sensors and the like.

Description

technical field [0001] The invention relates to a Si-based TaSi 2 The invention discloses a method for preparing a nano-tip array, belonging to the technical field of semiconductor nano-material preparation. Background technique [0002] Directional Solidification Si-TaSi 2 Eutectic autogenous composites will form three-dimensional Si / TaSi at the phase interface 2 Schottky junction, and since the TaSi 2 have a high melting point (T m =2040°C), high conductivity (ρ 293K =20.20Ωμ·cm), lower work function And it has good bonding strength with silicon, making Si / TaSi 2 The rectifying junction exhibits low junction voltage and high avalanche voltage, making Si-TaSi 2 The eutectic self-generated composite material has become a new type of field emission cathode material with broad application prospects, such as field effect diodes, flat panel displays, sensors and other devices. Usually, the traditional method of preparing a cone array is photolithography and chemical etc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/10C30B13/24C23F1/24
Inventor 苏海军张军杨新宇刘林傅恒志
Owner NORTHWESTERN POLYTECHNICAL UNIV