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A high electron mobility device using a gate-first process and its preparation method

A high electron mobility, device technology, used in semiconductor/solid state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of product parameter drift, difficult to achieve accurate alignment of HEMT devices, etc., to enhance electrical performance, reduce Drift effect

Active Publication Date: 2015-10-28
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the size of the device shrinks, it is difficult to achieve precise alignment of the gate, source, and drain positions of the HEMT device with this gate-last process method, resulting in drift of product parameters

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  • A high electron mobility device using a gate-first process and its preparation method
  • A high electron mobility device using a gate-first process and its preparation method
  • A high electron mobility device using a gate-first process and its preparation method

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Embodiment Construction

[0028] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. In the drawings, for the convenience of illustration, the thicknesses of layers and regions are enlarged or reduced, and the sizes shown do not represent actual sizes. Although these figures do not fully reflect the actual size of the device, they still completely reflect the mutual positions between the regions and the constituent structures, especially the upper-lower and adjacent relationships between the constituent structures.

[0029] figure 1 It is an embodiment of the high electron mobility device using the gate-first process proposed by the present invention, wherein, figure 1 a is a schematic top view of the high electron mobility device, figure 1 b for figure 1 The cross-sectional view of the structure shown in a along the direction AA. Such as figure 1 As shown, the substrate includes a substrate 200 and a gallium nitrid...

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Abstract

The invention belongs to the technical field of a high electron mobility device and particularly relates to a high electron mobility device adopting a grid first process and a preparation method thereof. The grid first process is adopted to prepare the high electron mobility device, the self-alignment of the positions of a grid electrode and a source electrode is realized through a grid electrode side wall, the drifting of product parameters is reduced, and meanwhile, as the grid electrode is protected by a passivation layer, the source electrode and a drain electrode of the device can be formed through an alloying process after the grid electrode is formed, the source and drain contact resistance is reduced, and the electrical property of the high electron mobility device is enhanced.

Description

technical field [0001] The invention relates to a high electron mobility device, in particular to a high electron mobility device using a gate-first process and a preparation method thereof, belonging to the field of high electron mobility devices. Background technique [0002] High Electron Mobility Transistors (HEMTs) are generally considered to be one of the most promising high-speed electronic devices. Due to the characteristics of ultra-high speed, low power consumption, and low noise (especially at low temperature), it can greatly meet the special needs of ultra-high-speed computers, signal processing, satellite communications, etc., so HEMT devices are widely valued. As a new generation of microwave and millimeter wave devices, HEMT devices show unparalleled advantages in terms of frequency, gain and efficiency. After more than 10 years of development, HEMT devices have already possessed excellent microwave and millimeter-wave characteristics, and have become the mai...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/423H01L21/335H01L21/28
Inventor 周鹏刘晓勇王鹏飞张卫
Owner FUDAN UNIV