Thin film transistor, amorphous silicon flat plate detection substrate and preparation method

Abstract

A thin film transistor, an amorphous silicon flat detection substrate and a manufacturing method are provided. The material for a source electrode and a drain electrode of the thin film transistor is a conductor converted from the material for the amorphous metal oxide active layer by depositing an insulating substance containing hydrogen ions not less than a preset value, which reduces the valence band level difference between the source and the drain electrodes and the active layer, realizes good lattice matching and improves electricity characteristics of the thin film transistor.

Description

technical field [0001] The invention relates to liquid crystal display technology, in particular to a thin film transistor, an amorphous silicon detector substrate and a preparation method. Background technique [0002] The amorphous silicon flat panel detection substrate is a device that converts X-rays into electrical signals. The structure of the amorphous silicon flat panel detection substrate includes: cesium iodide scintillation layer, amorphous selenium photoelectric conversion layer and thin film transistor (TFT). The thin film transistor includes a source and a drain, a gate, an active layer and a passivation layer, the source and the drain are directly connected to the active layer; the material of the source and the drain is a conductor, most of which are metal; the active layer The material is semiconductor, commonly used are amorphous silicon (A-Si), low temperature polysilicon (LTPS), amorphous metal oxide semiconductor (for example, indium gallium zinc oxide I...

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Problems solved by technology

[0005] Wherein the amorphous silicon 104 deposited on the gate insulating layer 103 constitutes the amorphous silicon active layer, and is connected with the amorphous silicon active layer through the N-type semiconductor 105, because the valence band energy level of the used metal source and drain 106 is related to that of the active layer. The energy level of the valence band of the amorphous silicon 104 in the source layer differs greatly, and the lattice matching is not good, which leads to the formation of a heterojunction or homojunction that has a great influence on the driving current signal, and the interface contact is poor, which affects Electrical Characteristics of Thin Film Transistors

[0006] It can be seen that the valence band energy level difference between the source and drain electrodes made of metal and the active layer made of amorphous silicon is relatively large, which has a great influence on the electrical characteristics of thin film transistors.

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