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Multiple-active-area high-efficiency optoelectronic device

A technology of optoelectronic devices and active regions, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., to achieve the effects of improving quantum efficiency, high luminous efficiency, and low cost

Inactive Publication Date: 2013-08-28
沈光地 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the above-mentioned problem that the direct tunnel junction cannot be used to connect multiple light-emitting units of the multilayer wide-bandgap optoelectronic device, the present invention proposes that at the P of the tunnel junction + District and N + A thin-layer doped defect region is introduced between the regions to form an indirect tunnel structure, so that electrons falling into the valence band of the P-type confinement layer first tunnel to the impurity defect energy level of the thin-layer doped defect region when the tunneling effect occurs , and then tunnel from this energy level to the conduction band of the N-type confinement layer (such as figure 2 ), changing the direct tunneling structure of the device into an indirect tunneling structure, and the direct tunneling of electrons into indirect tunneling, thereby increasing the probability of electron tunneling by an order of magnitude, and obtaining high-efficiency multi-active region high-efficiency optoelectronic devices

Method used

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  • Multiple-active-area high-efficiency optoelectronic device
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Embodiment 1

[0028] Taking GaN-based LED with multiple active regions as an example, its epitaxial structure is as follows image 3 and 4 as shown,

[0029] The epitaxial structure of the device includes a substrate 500, a buffer layer 400, a N + heavily doped contact layer 300, light emitting region 200, P + The contact layer 100 is heavily doped. .

[0030] The light-emitting region 200 is composed of any number of overlapping regions 230 stacked in sequence

[0031] The repeating region 230 is composed of light-emitting units 210 and indirect tunneling structures 220 stacked vertically from bottom to top, where P + heavily doped contact layer 100 and N + The heavily doped contact layer 300 is in contact with the light emitting unit 210 .

[0032] The light emitting unit 210 is composed of an N-type hole confinement layer 213 , an active region 212 , and a P-type electron confinement layer 211 stacked in sequence.

[0033] The light-emitting unit 210 is a light-emitting unit of a...

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Abstract

The invention discloses a multiple-active-area high-efficiency optoelectronic device and belongs to the field of semiconductor photoelectron. The multiple-active-area high-efficiency optoelectronic device is characterized in that an indirect tunneling structure is introduced to the multiple-active-area optoelectronic device, a plurality of light-emitting units are connected through the indirect tunneling structure, the tunneling probability of a charge carrier is increased, and quantum efficiency of the device is improved by multiple times. The device structure can be used for a light-emitting diode, a semiconductor laser unit, a multi-layer structure inter-band detector, a super-radiance light-emitting diode and the like.

Description

technical field [0001] Introducing an indirect tunneling structure into a multi-active area optoelectronic device to form a multi-active area high-efficiency optoelectronic device relates to a new optoelectronic device structure and belongs to the field of semiconductor optoelectronics. Background technique [0002] At present, optoelectronic devices, especially light-emitting diodes (LEDs), are developing rapidly and have been widely used in the field of lighting. In order to apply LEDs to indoor lighting, it must match our commonly used 220V AC, and high-voltage multi-active area LEDs are meeting this requirement. Require. [0003] Usually, the way to realize high-voltage optoelectronic devices is to connect a certain number of dies or devices in series. There are two processes: ① package the chips to make devices and then connect them in series; ② connect them in series during the chip preparation process. However, no matter what kind of process, wiring must be used, so ...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/08H01L33/00
Inventor 沈光地马莉
Owner 沈光地