Method for optimizing superconducting performance of niobium nitride film on silicon substrate by using buffer layer
A technology of superconductivity and niobium nitride, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problem of reduced superconductivity, large lattice mismatch, device service life and stability limitations and other problems, to achieve the effect of improving superconducting performance and obvious effect
Active Publication Date: 2015-07-08
NANJING UNIV
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The niobium nitride films currently used are mainly prepared on two substrates of magnesium oxide and high-resistance silicon. The lattice mismatch between the magnesium oxide substrate and niobium nitride is small, so epitaxial niobium nitride films can be grown, superconducting Excellent performance, but the magnesium oxide substrate is easy to hydrolyze, and the niobium nitride film prepared on it and the devices based on it are limited in service life and stability
Niobium nitride thin films prepared on high-resistance silicon substrates have advantages in subsequent processing (such as further preparation of resonant cavities to improve chip performance) and integration with silicon processes. However, due to the large lattice mismatch, the thin films have multiple Crystalline properties, resulting in a greater reduction in superconducting properties
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0014] Below in conjunction with accompanying drawing and specific embodiment, further illustrate the present invention, should be understood that these embodiments are only for illustrating the present invention and are not intended to limit the scope of the present invention, after having read the present invention, those skilled in the art will understand various aspects of the present invention Modifications in equivalent forms all fall within the scope defined by the appended claims of this application.
[0015] After substrate cleaning and ion cleaning, a layer of 25-100nm (preferably about 40nm) hexanitrogenpenta-niobium thin film is magnetron sputtered on the high-resistance silicon substrate. The sputtering conditions used are shown in Table 1. Such as figure 1 As shown, we measured the resistance-temperature curve of the prepared niobium hexanitrogen-penta thin film and found that it has semiconductor properties and will not degrade the superconducting properties of ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a method for optimizing the superconducting performance of a niobium nitride film on a silicon substrate by using a buffer layer, comprising the following steps of: performing magnetron sputtering of a six nitrogen five niobium film on a high-resistance silicon substrate to serve as a buffer layer, and performing in-situ magnetron sputtering of a niobium nitride film in a vacuum chamber. According to the method, the six nitrogen five niobium film buffer layer is coated on the high-resistance silicon substrate through magnetron sputtering so that the superconducting performance of the niobium nitride film is obviously improved, and particularly, the performance of an ultra-thin film is more obviously improved. The method disclosed by the invention can also be expanded to improve the superconducting performance of the niobium nitride film on other substrates and is simple, easy and obvious in effect.
Description
technical field [0001] The invention relates to the field of preparing superconducting niobium nitride thin films, in particular to a method for optimizing the superconducting properties of niobium nitride thin films on silicon substrates by using a buffer layer. Background technique [0002] Niobium nitride thin film is a superconducting thin film with excellent performance. It has an irreplaceable position in the fields of quantum communication and terahertz detection. devices such as single-photon detectors. The niobium nitride films currently used are mainly prepared on two substrates of magnesium oxide and high-resistance silicon. The lattice mismatch between the magnesium oxide substrate and niobium nitride is small, so epitaxial niobium nitride films can be grown, superconducting The performance is excellent, but the magnesium oxide substrate is easy to hydrolyze, and the niobium nitride thin film prepared on it and the device based on it are limited in service life ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 贾小氢康琳涂学凑顾敏杨小忠吴培亨
Owner NANJING UNIV