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Light emitting device and manufacturing method thereof

A technology of light-emitting devices and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as chip aging, leakage life, etc.

Active Publication Date: 2016-12-28
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially in the long-term use of high-power chips, the aging leakage of chips is an important reason for the low actual service life

Method used

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  • Light emitting device and manufacturing method thereof
  • Light emitting device and manufacturing method thereof
  • Light emitting device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Please see attached figure 1 , is a cross-sectional view of a LED light-emitting device with a vertical structure, including: a semiconductor epitaxial stack 210, a mirror layer 231 and a conductive substrate 202, wherein the conductive substrate 202 is used to support the semiconductor epitaxial stack 210, and the mirror layer 231 is located on the conductive substrate 202 and the semiconductor epitaxial stack 210.

[0051] Specifically, the semiconductor epitaxial stack 210 includes at least a P-type semiconductor layer 211 , a light emitting layer 212 and an N-type semiconductor layer 213 , and the materials thereof may be GaN-based materials or AlGaInP materials, but are not limited thereto. A series of defect dislocations 214 exist because the semiconductor epitaxial stack 210 does not exactly match the crystal lattice of the growth substrate. The surface dislocations of the P-type semiconductor layer 211 are filled with an anti-diffusion metal 221 , which can be ...

Embodiment 2

[0067] This embodiment is an LED light-emitting device with a flip-chip structure. Please see attached Figure 13 , the flip-chip LED light-emitting device includes: a sapphire substrate 301; a GaN semiconductor epitaxial stack 310 is formed on the sapphire substrate 301, including: an N-type semiconductor layer 313, a light-emitting layer 312 and a P-type semiconductor layer 311, a series of defect dislocations 314 runs through the entire semiconductor epitaxial stack 310; the anti-migration metal 321 is filled in the defect dislocations on the surface of the P-type semiconductor layer 311; the bonding layer 331 is formed on the P-type semiconductor layer 311; the mirror layer 332 is formed on the bonding layer 331 P electrode 341 is formed on the mirror layer 332, and N electrode 342 is formed on the N-type semiconductor layer 313; a conductive substrate 302 has P and N soldering points (generally a metal layer) on it; P electrode 341 and N electrode 342, respectively corre...

Embodiment 3

[0069] In LED light-emitting devices, the chip can be connected to a base through a solder layer, and the solder layer often uses metal materials that contain tin and the like that are easily migrated. Please see attached Figure 14 , the LED chip is mounted on a base 402 through a solder layer 450, wherein the LED chip includes: a semiconductor epitaxial stack 410, which is composed of a P-type semiconductor layer 411, a light-emitting layer 412 and an N-type semiconductor layer 413, and there are defect dislocations in it 414 , filling the anti-electromigration metal 421 in the defect dislocations on the surface of the P-type semiconductor layer 411 . The LED chip may also include other structural layers, such as reflective layers, current spreading layers, etc., which are not shown in this embodiment. The material of the solder layer 430 is generally a multi-layer structure, and the material is selected from a single metal of titanium, aluminum, nickel, chromium, tin or an...

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Abstract

The invention discloses a light-emitting device with less aging leakage and high light efficiency and a manufacturing method thereof. Its light-emitting device at least includes: a semiconductor epitaxial stack, including an N-type semiconductor layer, a P-type semiconductor layer, and a light-emitting layer sandwiched between the N-type semiconductor layer and the P-type semiconductor layer, and its surface has defect dislocations; The electromigration metal is filled into the defect dislocations on the surface of the N-type or / and P-type semiconductor layer through pretreatment, so as to block the electromigration channels formed by the defect dislocations in the semiconductor epitaxial stack and reduce the leakage occur.

Description

technical field [0001] The invention belongs to the field of semiconductor device manufacturing, and in particular relates to a light-emitting device with less aging leakage and high light efficiency and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English for Light Emitting Diode, LED for short) is a semiconductor light-emitting device, which is widely used as an indicator light because of its advantages of environmental protection, high brightness, low power consumption, long life, low operating voltage, and easy integration. , display screen and other display or lighting fields. White LEDs will become the fourth generation of new lighting sources after incandescent lamps, fluorescent lamps and high-intensity discharge lamps (such as high-pressure sodium lamps). [0003] In recent years, due to breakthroughs in materials and technologies, the luminous brightness of white LEDs has been greatly improved, and its luminous efficacy has s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02
CPCH01L33/025H01L33/0093H01L33/0095H01L33/10H01L33/145
Inventor 梁兴华夏德玲徐宸科赵志伟李水清
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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