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Light-emitting element

一种发光元件、障壁层的技术，应用在电气元件、半导体器件、电路等方向，能够解决亮度低下、解决情形不够充分等问题，达到高发光效率、低电阻发光效率的效果

Active Publication Date: 2013-09-04
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the solution to the problem of low brightness is not enough, so higher quality components are required

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1、2

[0108] As Example 1, make figure 1 The light-emitting element 10 according to the first embodiment of the present invention is shown. Also, as Example 2, a Image 6 The light-emitting element 20 of the second embodiment of the present invention is shown.

[0109] In both Examples 1 and 2, the compositions of the barrier rib layers 106B, 207B of the multiple active layer portions 106, 207 were set to Al 0.85 GaInP, and the composition of the barrier layer 106C, 207C is Al 0.60 GaInP. Accordingly, the energy bandgap of the barrier layer on the side closer to the p-type cladding layer is made smaller than the energy bandgap of the barrier layer on the side closer to the n-type cladding layer.

[0110] Also, in Examples 1 and 2, for the superlattice barrier layers 105 and 205, the layers 105A and 205A are both made of a high Al bandgap layer material (AlInP layer) with a film thickness of 15 nm, and the layers 105B and 205B are both made of a film 15nm thick low energy bandga...

Embodiment 3、4

[0120] As Example 3, make figure 1 The light-emitting element 10 according to the first embodiment of the present invention is shown. Also, as Example 4, a Image 6 The light-emitting element 20 of the second embodiment of the present invention is shown.

[0121] In Examples 3 and 4, the compositions of the barrier rib layers 106B and 207B of the multiple active layer portions 106 and 207 were set to Al 0.85 GaInP, and the composition of the barrier layer 106C, 207C is set to Al 0.60 GaInP. Accordingly, the energy bandgap of the barrier layer on the side closer to the p-type cladding layer is made smaller than the energy bandgap of the barrier layer on the side closer to the n-type cladding layer.

[0122] Also, in Examples 3 and 4, the superlattice barrier layers 105 and 205 are all made of a high Al bandgap layer material (AlInP layer) with a film thickness of 15 nm for the layers 105A and 205A, and both the layers 105B and 205B are made of a film The low energy bandgap...

Embodiment 5、6

[0128] As Example 5, make figure 1 The light-emitting element 10 according to the first embodiment of the present invention is shown. Also, as Example 6, a Image 6 The light-emitting element 20 of the second embodiment of the present invention is shown.

[0129] In Examples 5 and 6, the compositions of the barrier rib layers 106B and 207B of the multiple active layer portions 106 and 207 were set to Al 0.85 GaInP, and the composition of the barrier layer 106C, 207C is Al 0.60 GaInP. Accordingly, the energy bandgap of the barrier layer on the side closer to the p-type cladding layer is made smaller than the energy bandgap of the barrier layer on the side closer to the n-type cladding layer.

[0130] Also, in Examples 5 and 6, the superlattice barrier layers 105 and 205 are all made of a high Al bandgap layer material (AlInP layer) with a film thickness of 15 nm for the layers 105A and 205A, and the layers 105B and 205B are both made of a film 15nm thick low energy bandgap...

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Abstract

The present invention is a light-emitting element produced using a compound semiconductor substrate comprising: a p-type cladding layer; a multiple active layer part formed by alternately laminating three or more active layers comprising (AlxGa1-x)yIn1-yP (0 x 0.6, 0.4 y 0.6) and two or more barrier layers having a higher Al content (x) than the active layers; and an n-type cladding layer. Therein, the barrier layer on the side near the p-type cladding layer has a smaller band gap than the barrier layer on the side near the n-type cladding layer, and the compound semiconductor substrate has a super-lattice barrier layer between the multiple active layer part and the n-type cladding layer or within the n-type cladding layer. This configuration provides a light-emitting element that maintains a high luminous efficiency (particularly internal quantum efficiency) with long life and low resistance.

Description

technical field [0001] The invention relates to a colored light-emitting element, which becomes a light source of an illumination or display machine, and specifically relates to a light-emitting element with multiple active layers. Background technique [0002] Since the light-emitting element with AlGaInP in the light-emitting layer is more than ten times brighter than the previous colored light-emitting element, the demand for such a light-emitting element is different from the previous light-emitting diode in automotive lighting or LCD backlight. continued to expand in use. In addition to the fact that AlGaInP is a direct transfer type, setting a transparent and thick window layer to improve the external quantum efficiency is also an important reason for brightening the light-emitting device. [0003] On the other hand, for example, a method is disclosed in Non-Patent Document 1. In order to improve the internal quantum efficiency, a thick transparent conductive layer is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/06H01L33/30
CPCH01L33/06H01L33/30H01L33/145
Inventor 石崎顺也
Owner SHIN-ETSU HANDOTAI CO LTD
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