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Manufacturing method of high-power field-effect transistor aluminum-gold bonding transition sheet

A technology of field effect transistors and transition sheets, which is applied in the field of field effect transistor manufacturing technology to achieve the effect of eliminating adverse effects and increasing the on-resistance value

Inactive Publication Date: 2013-09-11
JIANGXI LIANCHUANG SPECIAL MICROELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Or use a method of thinning the gold layer, although this can reduce the Kirkendall effect, it will also reduce the strength of the wire bond

Method used

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  • Manufacturing method of high-power field-effect transistor aluminum-gold bonding transition sheet
  • Manufacturing method of high-power field-effect transistor aluminum-gold bonding transition sheet
  • Manufacturing method of high-power field-effect transistor aluminum-gold bonding transition sheet

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Embodiment Construction

[0026] (3) Alloying treatment. Place the transition piece in a high-purity nitrogen atmosphere with a flow rate of 700-1000mL / min, keep the temperature at 500-520°C for 20±2 minutes, and carry out alloying treatment on the transition piece to enhance the ohmic contact between the gold layer and aluminum.

[0027] (4) Using a slicer, cut it into 1.0㎜×1.0 mm and 1.5㎜×1.5mm aluminum-gold bonding transition sheet materials according to the requirements of the assembled tube shell.

[0028] The aluminum-gold bonding transition piece obtained by the above method was pressed image 3 Shown for Al-Au bonding system.

[0029] The gold-titanium alloy surface 4 of the aluminum-gold bonding transition piece is welded on the gold-plated layer 2 of the gold-plated stem through the solder 3; the high-purity aluminum wire 1 is welded on the aluminum surface 11 of the aluminum-gold bonding transition piece.

[0030] Use high-purity aluminum wires to bond on the aluminum surface of the alumin...

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Abstract

A manufacturing method of a high-power field-effect transistor aluminum-gold bonding transition sheet includes steps of (1) selecting and cleaning an aluminum sheet; (2) plating gold on one side of the aluminum sheet; (3) alloying and reinforcing ohmic contact between the gold layer and aluminum; (4) cutting to obtain transition sheet materials different in specification as required. When the aluminum-gold bonding transition sheet is used for high-purity aluminum wire bonding, a gold titanium alloy surface (4) of the aluminum-gold bonding transition sheet is welded on a gold plated layer (2) of a gold-plated mandrel through a welding flux (3); high-purity aluminum wires (1) are welded on an aluminum surface (11) of the aluminum-gold bonding transition sheet. The manufactured aluminum-gold bonding transition sheet is used for high-purity aluminum wire bonding and can eliminate adverse affection caused by intermetallic and Kendal effect generated by the aluminum-gold bonding and has no affection on bonding strength and on resistance of wires. Besides, the aluminum-gold bonding transition sheet is applicable to wire bonding of high-power field-effect transistors.

Description

[0001] technical field [0002] The invention relates to a method for preparing an aluminum-gold bonding transition sheet of a high-power field effect transistor, belonging to the technical field of field effect transistor manufacturing technology. Background technique [0003] Wire bonding is a key step in the back-end process of semiconductor production, and it is still one of the mainstream methods for internal interconnection of semiconductor packages for a long time. According to relevant research, in the failure events of semiconductor devices, the failure mode caused by wire bonding failure accounts for about 49%. Therefore, the internal interconnection of the semiconductor package has a great impact on the long-term reliability of the device. [0004] Ultrasonic bonding of high-power field-effect transistors uses high-purity aluminum wire bonding to gold-plated stems to achieve internal interconnections. In the steps of bonding, high-temperature storage, and dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48H01L21/60
CPCH01L2224/45124H01L2224/4847H01L2224/48491H01L2224/73265H01L2924/00
Inventor 谢忠平李宗宇
Owner JIANGXI LIANCHUANG SPECIAL MICROELECTRONICS
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