Formation method of radio frequency components

Abstract

A formation method of radio frequency components comprises a back substrate, a buried oxide layer and an upper insulator semiconductor layer. The buried oxide layer covers on the back substrate, and the upper insulator semiconductor layer covers on a top semiconductor layer of the buried oxide layer; a transistor and an interlayer dielectric layer covering on the transistor are formed on the surface of the top semiconductor layer. The formation method includes providing a smooth-surfaced temporary support layer, and jointing the surface of the interlayer dielectric layer and the temporary support layer; removing the back substrate till the buried oxide layer is exposed; providing a high-resistance-rate substrate, and jointing the same with buried oxide layer; removing the temporary support layer to expose the surface of the interlayer dielectric layer after the high-resistance-rate substrate is jointed with the buried oxide layer. By the formation method of the radio frequency components, signal loss is low, and linearity is high.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a radio frequency device. Background technique [0002] Semiconductor devices continue to develop toward high integration, high operating speed, and low power consumption. Therefore, the application of bulk silicon (bulk silicon) substrates is increasingly restricted. On the contrary, the silicon-on-insulator substrate has the advantages of realizing dielectric isolation of components in integrated circuits, completely eliminating the parasitic latch effect in bulk silicon CMOS circuits, small parasitic capacitance, high integration density, fast speed, simple process, and small short channel effect. And it is suitable for low-power and low-voltage circuits. Therefore, the use of silicon-on-insulator substrates to form semiconductor devices is becoming more and more popular. [0003] RF devices are required to have a small parasitic capac...

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Problems solved by technology

[0005] However, in the actual use process of the above-mentioned silicon-on-insulator radio frequency devices, it will be found that in some radio frequency applications that require high linearity and low insertion loss, there are defects of large signal loss and poor linearity of radio frequency signals.

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