NAND memory based on nanocrystalline and manufacturing method thereof

Abstract

The invention relates to an NAND memory based on nanocrystalline and a manufacturing method of the NAND memory based on the nanocrystalline. The NAND memory comprises a nanocrystalline storage unit and a selective transistor. The nanocrystalline storage unit comprises a silicon base, a conduction source region and a conductive leakage area which are arranged at two sides of the silicon base, a tunneling medium layer covering on the charge carrier channel between the source conductive region and the conductive leakage area, a nanocrystalline charge storage layer covering on the tunneling medium layer, a control grid medium layer covering on the nanocrystalline charge storage layer, and a grid electrode material layer covering on the control grid medium layer. The transistor comprises a silicone base, a conductive source region and a conductive leakage region which are arranged at two sides of the silicone base, a medium layer covering on the charge carrier channel between the conductive source region and the conductive leakage region, and a grid electrode material layer covering on the medium layer. The NAND memory based on the nanocrystalline and the manufacturing method of the NAND memory based on the nanocrystalline can reduce the area of a chip in a large-scale mode, meanwhile can save one to two lines of photomask due to the fact that the source-drain junction in the middle part of a storage unit is removed, and preparation is made for the memory of next generation.

Description

technical field [0001] The invention relates to the technical field of nanoelectronic devices and nanoprocessing, in particular to a nanocrystal-based NAND memory and a manufacturing method thereof. Background technique [0002] In recent years, the growth rate of memory in integrated circuits has exceeded that of logic circuits. The proportion of memory in chip area has increased from 20% in 1999 to nearly 80% in 2007, while logic circuits have dropped from 66% in 1999 to 2007. 14% of the year. Among memory products, the fastest growing market demand is non-volatile memory. As a typical device of non-volatile memory, flash memory (Flash Memory) has been widely used in various handheld mobile storage electronic products such as U disk, MP3 player and mobile phone. However, the flash memory device structure widely adopted by the industry is facing serious challenges in terms of storage time and power consumption while developing to nanometer feature size. [0003] The nano...

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Problems solved by technology

[0004] In traditional NAND memory, the storage unit is a separate flash memory device, which requires each device to be connected together, resulting in a large area

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