Reference current and reference voltage generation circuit with high power-supply rejection ratio and low power consumption

Abstract

The invention relates to a reference current and reference voltage generation circuit with a high power-supply rejection ratio and low power consumption. The generation circuit is characterized by comprising PMOS (P-channel Metal Oxide Semiconductor) tube P1, P2 and P3, and NMOS (N-channel Metal Oxide Semiconductor) tube N1, N2, N3, N4 and N5, wherein a power supply VDD (Voltage Drain Drain) is connected with the grid electrode of the N1, the source electrodes of the P1, the P2 and the P3, and the drain electrode of the N1; the source electrode of the N1 is connected with the source electrode of the N3 and the drain electrode of the N4; the grid electrode of the N4 is connected with the grid electrode and the drain electrode of the N5 and the drain electrode of the P2; the grid electrode of the N2 is connected with the grid electrode and the drain electrode of the N3; the source electrodes of the N2, the N4 and the N5 are connected with the power GND; and the drain electrode of the P3 is used as the output end of the reference current generation circuit. The generation circuit provided by the invention is low in power consumption, low in area and high in power-supply rejection ratio.

Description

Technical field [0001] The invention relates to the field of analog integrated circuit design, in particular to a high power supply rejection ratio, low power consumption reference current and reference voltage generating circuit. Background technique [0002] The reference voltage and reference current generation circuit is an important unit module in the integrated circuit, which is widely used in various analog integrated circuits, digital-analog hybrid integrated circuits and system-on-chips, such as analog-to-digital converters (ADC), phase-locked loops ( PLL) and power management chips. Today's reference power supplies generally require low power consumption, low power supply voltage, low temperature drift coefficient, high power supply rejection ratio, and low output noise. [0003] Existing reference voltage circuits for achieving low temperature drift coefficient generally use substrate bipolar transistors in the CMOS process, because the base-emitter voltage of the bipol...

AI Technical Summary

Problems solved by technology

[0005] 2. Compared with the MOS tube, the triode has a larger layout area, and requires resistors, which occupy a larger area

[0006] 3. Increase the op amp, the power supply voltage is high, and the power consumption is high

[0013] 2. The existing technology drives I1=I2 by introducing an operational amplifier, but the offset and noise of the operation

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