Nitride semiconductor device
A technology of nitride semiconductors and components, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as HFET loss, switching noise, and component damage, and achieve the effect of suppressing switching noise
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no. 1 Embodiment approach ）
[0025] refer to figure 1 and figure 2 The nitride semiconductor device according to the first embodiment of the present invention will be described. figure 1 is a schematic cross-sectional view of the nitride semiconductor element of the first embodiment, figure 2 It is a plan view showing the arrangement of electrodes of the nitride semiconductor element.
[0026] The nitride semiconductor device of this embodiment includes a conductive substrate 1, a buffer layer 2, a nitride semiconductor layer 3, a nitride semiconductor layer 4, a source electrode 5, a drain electrode 6, a gate electrode 7, an anode electrode 8, a cathode electrode 9, Back electrode 10, element isolation insulating layers 11a, 11b, and frame electrode 5A.
[0027] Such as figure 1 As shown, a nitride semiconductor layer 3 serving as a channel layer is formed on a conductive substrate 1 via a buffer layer 2 , and a nitride semiconductor layer 4 serving as a barrier layer is formed thereon. Furthermor...
no. 2 Embodiment approach ）
[0073] Next, refer to Figure 8 and Figure 9 A nitride semiconductor device according to a second embodiment of the present invention will be described. Figure 8is a schematic cross-sectional view of the nitride semiconductor element of the second embodiment, Figure 9 It is a plan view showing the arrangement of electrodes of the nitride semiconductor element.
[0074] One of the points of difference between the second embodiment and the first embodiment is that a second HFET is formed in the second embodiment. In addition, in the following description of this embodiment, the same code|symbol is attached|subjected to the same component as 1st Embodiment, and the description is abbreviate|omitted.
[0075] Such as Figure 8 As shown, the nitride semiconductor device of this embodiment further includes HFET 12 a provided adjacent to HFET 12 and SBD 13 . This HFET 12a has a structure similar to that of the HFET 12, and has a source electrode 5a, a drain electrode 6a, and ...
no. 3 Embodiment approach ）
[0085] Next, refer to Figure 11 and Figure 12 A nitride semiconductor device according to a third embodiment of the present invention will be described. Figure 11 is a schematic cross-sectional view of the nitride semiconductor element of the third embodiment, Figure 12 It is a plan view showing the arrangement of electrodes of the nitride semiconductor element.
[0086] One of the differences between the third embodiment and the first embodiment is that in the third embodiment, a second HFET and a second SBD connected in series are formed. In addition, in the following description of the present embodiment, the same reference numerals are assigned to the same components as those in the first and second embodiments, and description thereof will be omitted.
[0087] Such as Figure 11 As shown, the nitride semiconductor device of this embodiment further includes HFET12a and SBD13a provided adjacent to HFET12 and SBD13. HFET 12a has a structure similar to HFET 12, havin...
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