Solar cell structure and preparing method thereof
A technology of solar cells and top cells, which is applied in the manufacture of circuits, electrical components, and final products. It can solve problems such as the limitation of lateral transport of photogenerated carriers, low light absorption efficiency of cells, and reduction of light absorption area, so as to eliminate the impact of shading , Accelerate the application and development, and enhance the effect of absorption efficiency
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Embodiment 1
[0029] refer to figure 1 , figure 2 As shown, the present embodiment provides a GaAs-based graphene / metal nanoparticle composite electrode GaInP / GaAs / InGaAs / InGaAs (1.9 / 1.42 / 1.0 / 0.7eV) four-junction cascaded solar cell, and its structure includes from bottom to top:
[0030] Bottom electrode 10, Si supporting substrate 11, solar cell assembly A, top cell window layer 19, and a gold nanoparticle layer dispersed on the surface of the top cell window layer 19 and in ohmic contact with the top cell window layer 19 20, and a graphene layer 30 covered on the gold nanoparticle layer 20 and in ohmic contact with the gold nanoparticle layer 20, a top electrode 40 and an antireflection film 50 are grown on the graphene layer 30; wherein The four-junction cascaded solar cell module A structure is: the first cell layer 12, the first tunnel junction 13, the second cell layer 14, the second tunnel junction 15, the third cell layer 16, and the third tunnel junction grown from bottom to top...
Embodiment 2
[0039] This embodiment provides a Ge-based graphene / metal nanoparticle composite electrode GaInP / GaAs / Ge (1.9 / 1.42 / 0.66eV) triple-junction solar cell. as attached image 3 , its structure includes from bottom to top:
[0040] Bottom electrode 10; and growing a multi-junction cell assembly B on a Ge substrate 11, including growing a first cell layer 12, a first tunnel junction 13, a second cell layer 14, a second tunnel junction 15, and a third cell layer 16; A top cell window layer 19 is provided on the surface of the multi-junction cell assembly B; a silver nanoparticle layer 20 dispersed on the surface of the top cell window layer 19 and in ohmic contact with the top cell window layer 19; a graphene layer 30 on the silver nanoparticle layer 20 and in ohmic contact with the silver nanoparticle layer 20; and a top electrode 40 and an antireflection film 50 grown on the graphene layer 30.
[0041] The following describes the preparation method of this solar cell:
[0042] A....
Embodiment 3
[0048] This embodiment provides an InP-based graphene / metal nanoparticle composite electrode GaInAsP / InGaAs (1.05 / 0.76eV) double-junction solar cell.
[0049] The double-junction cascaded solar cell provided in this embodiment, as attached Figure 4 , whose structure includes:
[0050]Bottom electrode 10; and multi-junction cell assembly C grown sequentially on substrate 11, which includes first cell layer 12, first tunnel junction 13, and second cell layer 14; top cell formed on the surface of multi-junction cell assembly C window layer 19; and a nickel nanoparticle layer 20 dispersed on the surface of the top cell window layer 19 and in ohmic contact with the top cell window layer 19; covered on the nickel nanoparticle layer 20 and in contact with the top cell window layer 20 A graphene layer 30 with the nickel nanoparticle layer 20 in ohmic contact; and a top electrode 40 and an antireflection film 50 grown on the graphene layer 30 .
[0051] The following describes the p...
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Abstract
Description
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Application Information
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