Light emitting diode (LED) with composite transparent conducting layer and preparation method thereof

A technology of light emitting diodes and transparent conductive layers, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as inability to effectively eliminate total reflection, and achieve the effects of low production cost, high controllability, and improved light extraction efficiency

Inactive Publication Date: 2013-09-25
JIANGSU E LITE SEMICON
View PDF4 Cites 31 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this light-emitting diode can improve the light extraction efficiency, it cannot effectively eliminate the total reflection at the interface between the P-type GaN layer and the transparent conductive layer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light emitting diode (LED) with composite transparent conducting layer and preparation method thereof
  • Light emitting diode (LED) with composite transparent conducting layer and preparation method thereof
  • Light emitting diode (LED) with composite transparent conducting layer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0054] The light emitting diode according to the first embodiment of the present invention and its manufacturing method will be described in detail below with reference to the accompanying drawings.

[0055] The light emitting diode according to the first embodiment includes a Group-III nitride epitaxial layer, a composite transparent conductive layer, a transparent passivation layer, and a metal electrode, and the composite transparent conductive layer is located between the Group-III nitride epitaxial layer and the transparent passivation layer. between. The doped titanium oxide layer is formed on the III-group nitride epitaxial layer, and the indium tin oxide layer covers the doped titanium oxide layer and forms a composite multi-layer structure with the doped titanium oxide layer to form a convex-concave mosaic, so that the light-emitting diode can be improved. light extraction efficiency.

[0056] Specifically, such as figure 1 As shown, the light emitting diode of this...

no. 2 example

[0070] Hereinafter, a light emitting diode having a composite transparent conductive layer and a manufacturing method thereof according to a second embodiment of the present invention will be described in detail with reference to the accompanying drawings. The light-emitting diode and its manufacturing method according to the second embodiment are similar to the light-emitting diode and its manufacturing method according to the first embodiment, and the similarities will not be repeated here, and only the second embodiment and the first embodiment will be described The differences are described in detail.

[0071] In this embodiment, the doped titanium oxide layer 105 and the indium tin oxide layer 106 are arranged periodically in space, thereby forming a two-dimensional photonic crystal structure, wherein the lattice constant is, for example, between 100 nanometers and 1 micrometer. The lattice type of the two-dimensional photonic crystal structure of the composite transparen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
electrical resistanceaaaaaaaaaa
Login to view more

Abstract

The invention discloses a light emitting diode (LED) with a composite transparent conducting layer and a preparation method of the light emitting diode with the composite transparent conducting layer. The LED comprises a third-family nitride epitaxial layer, the composite transparent conducting layer, a transparent passivation layer and metal electrodes. The composite transparent conducting layer is located between the third-family nitride epitaxial layer and the transparent passivation layer and is formed by a titanium oxide layer doped by high-valence metal atoms and an indium tin oxide layer, the doped titanium oxide layer is formed on the third-family nitride epitaxial layer, and the indium tin oxide layer covers the doped titanium oxide layer and forms an convex-concave inlaid composite multilayered structure with the doped titanium oxide layer. The LED with the composite transparent conducting layer can effectively eliminate the total reflection on the interface portion of the third-family nitride and the transparent conducting layer, greatly improves light extraction efficiency of luminescent devices, has the advantages of being simple in technology, low in cost and the like, and is wide in application prospect in the field of ultra-high brightness LED manufacturing.

Description

technical field [0001] The invention relates to a light-emitting diode (LED) and a preparation method thereof, in particular to a light-emitting diode with a composite transparent conductive layer that improves the light extraction efficiency of the light-emitting diode and a preparation method thereof. Background technique [0002] Blue-green light-emitting diodes based on III-nitride semiconductor materials (GaN, AlN, InN and their alloys) have the advantages of small size, long life, and high efficiency. They have been widely used in general lighting, traffic indication, outdoor full-color Display, LCD backlight, home appliance indicator light and other fields. [0003] In the LED structure, the refractive index of the GaN luminescent material is about 2.4, while the refractive index of the transparent conductive layer (usually indium tin oxide, ITO) is 1.9-2.0, and the transparent passivation layer and packaging materials (such as epoxy resin, silica gel, etc.) ) The re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/42
Inventor 刘洪刚郭浩
Owner JIANGSU E LITE SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap