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Method for treating graphene on inert base

A graphene, graphene surface technology, applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., can solve problems such as not suitable for large-scale industrial processing, graphene structure damage, etc. control effect

Inactive Publication Date: 2013-10-30
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method needs to introduce a reaction device with a high vacuum system, and it is easy to cause irreversible structural damage on the graphene surface, so it is not suitable for actual large-scale industrial processing

Method used

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  • Method for treating graphene on inert base
  • Method for treating graphene on inert base

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The concentration of 47.4 wt% H 2 SO 4 Aqueous solution with KMnO at a concentration of 0.237 wt% 4 The aqueous solution is mixed at a volume ratio of 1:1 to obtain Mn 2 o 7 Aqueous solution, calculate Mn 2 o 7 The concentration is 0.08325% by weight, the determination of Mn 2 o 7 The hydrogen ion concentration in the aqueous solution is 9.1mol / L. At 20 °C, the graphene-deposited silica substrate was immersed in the obtained Mn 2 o 7 in the aqueous solution. When immersing 0s, 10s, 20s, 40s, 90s, 180s, 360s, 600s, the substrate was removed from the Mn 2 o 7 Take it out from the aqueous solution, transfer it to deionized water with a resistance value of 18.2MΩ, let it stand for 4min, then take it out and dry it with nitrogen. The conductivity and energy gap of graphene after immersion for different time were measured, and the results are shown in Table 1.

Embodiment 2

[0049] With a concentration of 46.6 wt% H 2 SO 4 Aqueous solution with KMnO at a concentration of 0.131 wt% 4 The aqueous solution is mixed at a volume ratio of 1:0.96 to obtain Mn 2 o 7 Aqueous solution, calculate Mn 2 o 7 The concentration is 0.045% by weight, the determination of Mn 2 o 7 The hydrogen ion concentration of the aqueous solution is 8.9mol / L. At 10 °C, the graphene-deposited silica substrate was immersed in the obtained Mn 2 o 7 in the aqueous solution. When immersing 0s, 10s, 20s, 40s, 90s, 180s, 360s, 600s, the substrate was removed from the Mn 2 o 7 Take it out from the aqueous solution, transfer it to deionized water with a resistance value of 15.2MΩ, let it stand for 3min, then take it out and dry it with nitrogen. The conductivity and energy gap of graphene after immersion for different time were measured, and the results are shown in Table 1.

Embodiment 3

[0051] A concentration of 48% by weight of H 2 SO 4 Aqueous solution with KMnO at a concentration of 0.472 wt% 4 The aqueous solution is mixed at a volume ratio of 1:1.04 to obtain Mn 2 o 7 Aqueous solution, calculate Mn 2 o 7 The concentration is 0.169% by weight, the determination of Mn 2 o 7 The hydrogen ion concentration of the aqueous solution is 8.7mol / L. At 30 °C, the graphene-deposited silica substrate was immersed in the obtained Mn 2 o 7 in the aqueous solution. When immersing 0s, 10s, 20s, 40s, 90s, 180s, 360s, 600s, the substrate was removed from the Mn 2 o 7 Take it out from the aqueous solution, transfer it to deionized water with a resistance value of 17MΩ, let it stand for 5min, then take it out and dry it with nitrogen. The conductivity and energy gap of graphene after immersion for different time were measured, and the results are shown in Table 1.

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Abstract

The invention discloses a method for treating graphene on an inert base. The method only comprises a step of immersing graphene in an aqueous solution with a hydrogen ion concentration of 8-10 mol / L and a Mn2O7 concentration of 0.016-0.4wt%; therefore, the method is simple and low in consumption; since graphene with different electrical properties can be obtained through adjusting the immersing time, the method is controllable; and the method needs mild reaction conditions and can be performed at room temperature without stirring, thereby implementing the treatment of graphene on an inert base. The method disclosed by the invention can be widely applied to industrial production.

Description

technical field [0001] The invention relates to a method for processing graphene, in particular to a method for processing graphene on an inert substrate. Background technique [0002] Since it was discovered that it can exist stably in 2004, graphene has become the focus of scientific and industrial circles because of its perfect crystal structure and unique physical and chemical properties such as mechanics, optics, electricity and heat. Graphene is a carbonaceous material with a two-dimensional honeycomb crystal structure formed by a single layer of carbon atoms tightly packed, and is the thinnest known material. It has high carrier mobility, up to 2×10 5 cm 2 v -1 the s -1 , whose value is about 100 times that of traditional silicon materials, and has a micron-scale mean free path at room temperature, so it has great potential to replace silicon as the core material of next-generation semiconductor components. [0003] However, in the case of the intrinsic state, gr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/194
Inventor 王圣楠王锐王小伟裘晓辉
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA