Method for cleaning semiconductor device

Abstract

The invention provides a method for cleaning a semiconductor device. The method includes the steps of conducting a first cleaning procedure on a corroded aluminum bronze welding pad through a hydroxyamino solvent, conducting a second cleaning procedure through a fluorine-based oxide etching agent so that metallic oxide and metal halide can be removed, and conducting a third cleaning procedure through deionized water, wherein rapidly discharging and rapidly flushing cleaning is conducted in the third cleaning procedure. The second cleaning procedure conducted through the fluorine-based oxide etching agent is conducted after the first cleaning procedure conducted through the hydroxyamino solvent is conducted, the metallic oxide and the metal halide on the surface of the corroded aluminum bronze welding pad can be removed, therefore, an acid crystal defect source can be prevented from being formed in the aluminum bronze welding pad in the wet environment, and failure of the semiconductor device caused by corrosion to the aluminum bronze welding pad is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a cleaning method for semiconductor devices. Background technique [0002] In the back-end process of Al-Cu technology, hydroxylamine (HDA) based solvents are usually used in the solvent cleaning process after pad (PAD) etch. The hydroxylamine-based solvent is used in the solvent cleaning process because the hydroxylamine can effectively remove residual photoresist and organic residues. [0003] However, after the pad etching process is completed, an aluminum halide compound layer 101 (such as Figure 1A shown), aluminum halides are by-products of the etching reaction. Subsequently, after the ashing treatment of oxygen, an aluminum oxide layer 102 (such as Figure 1B shown). When the hydroxylamine solvent is used to perform the solvent cleaning process, although the photoresist and organic residues can be effectively removed, the aluminum halide compound la...

AI Technical Summary

Problems solved by technology

When the hydroxylamine solvent is used to perform the solvent cleaning process, although the photoresist and organic residues can be effectively removed, the aluminum halide compound layer 101 and the aluminum oxide layer 102 (such as Figure 1C shown)

However, in a humid environment, metal halides can form acidic crystallographic defect sources 103 (such as Figure 1D shown)

These acidic crystal defect sources 103 are likely to corrode the aluminum halide compound layer 101 and the aluminum oxide layer 102 and further corrode the aluminum copper pad 100, resulting in failure of the semiconductor device

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