Method for cleaning semiconductor device

A semiconductor and device technology, applied in the field of semiconductor device cleaning, can solve problems such as corrosion, semiconductor device failure, and the inability to remove the aluminum oxide layer 102 of the aluminum halide compound layer, and achieve the effect of avoiding failure

Active Publication Date: 2013-10-30
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

When the hydroxylamine solvent is used to perform the solvent cleaning process, although the photoresist and organic residues can be effectively removed, the aluminum halide compound layer 101 and the aluminum oxide layer 102 (such as Figure 1C shown)
However, in a humid environment, metal halides can f

Method used

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  • Method for cleaning semiconductor device
  • Method for cleaning semiconductor device
  • Method for cleaning semiconductor device

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[0021] Next, the present invention will be described more completely with reference to the accompanying drawings, in which embodiments of the present invention are shown. However, the present invention can be implemented in different forms and should not be construed as being limited to the embodiments presented here. On the contrary, the provision of these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals denote the same elements throughout.

[0022] It should be understood that when an element or layer is referred to as being "on", "adjacent to", "connected to" or "coupled to" other elements or layers, it can be directly on the other elements or layers. On a layer, adjacent to, connected or coupled to other elements or layers, or intervening elements or la...

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Abstract

The invention provides a method for cleaning a semiconductor device. The method includes the steps of conducting a first cleaning procedure on a corroded aluminum bronze welding pad through a hydroxyamino solvent, conducting a second cleaning procedure through a fluorine-based oxide etching agent so that metallic oxide and metal halide can be removed, and conducting a third cleaning procedure through deionized water, wherein rapidly discharging and rapidly flushing cleaning is conducted in the third cleaning procedure. The second cleaning procedure conducted through the fluorine-based oxide etching agent is conducted after the first cleaning procedure conducted through the hydroxyamino solvent is conducted, the metallic oxide and the metal halide on the surface of the corroded aluminum bronze welding pad can be removed, therefore, an acid crystal defect source can be prevented from being formed in the aluminum bronze welding pad in the wet environment, and failure of the semiconductor device caused by corrosion to the aluminum bronze welding pad is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a cleaning method for semiconductor devices. Background technique [0002] In the back-end process of Al-Cu technology, hydroxylamine (HDA) based solvents are usually used in the solvent cleaning process after pad (PAD) etch. The hydroxylamine-based solvent is used in the solvent cleaning process because the hydroxylamine can effectively remove residual photoresist and organic residues. [0003] However, after the pad etching process is completed, an aluminum halide compound layer 101 (such as Figure 1A shown), aluminum halides are by-products of the etching reaction. Subsequently, after the ashing treatment of oxygen, an aluminum oxide layer 102 (such as Figure 1B shown). When the hydroxylamine solvent is used to perform the solvent cleaning process, although the photoresist and organic residues can be effectively removed, the aluminum halide compound la...

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Application Information

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IPC IPC(8): H01L21/02H01L21/48
Inventor 史爽詹扬常延武
Owner SEMICON MFG INT (SHANGHAI) CORP
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