Mems glass paste bonding structure and manufacturing method thereof
A technology of glass paste and bonding structure, which is applied in the field of MEMS, can solve the problems of device damage to the overall performance, large bonding area, and drop, and achieve the effects of reducing layout area, improving reliability, and reducing manufacturing costs
Active Publication Date: 2015-12-09
HANGZHOU SILAN INTEGRATED CIRCUIT
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
In these bonding processes, compared with other bonding processes, the advantages of low-temperature glass paste bonding are that it has good sealing effect, high bonding strength, high production efficiency, and no special requirements for the surface of the sealing substrate. , can be widely used in the wafer-level packaging of MEMS products; the disadvantage is that the glass paste is prone to stretch or flow during the printing and bonding sintering process, and needs to occupy a large bonding area, and the extended part of the paste It may affect the work of the movable part structure of MEMS micromachines, thereby destroying the device or reducing the overall performance
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0044] The present invention will be further described below in conjunction with specific embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.
[0045] refer to figure 1 , the MEMS glass paste bonding structure of this embodiment includes a capping silicon chip 101 and a device silicon chip 105, wherein the capping silicon chip 101 is provided with a micromechanical protection cavity 104, a first glass paste bonding region 102a, The glass paste isolation groove 103; the device silicon wafer 105 is provided with a micro-mechanical structure groove 107, a second glass paste bonding area 102b, and a glass paste protection groove 106.
[0046] Furthermore, the glass paste isolation groove 103 is located at the periphery of the micromachine protection cavity 104, and the first glass paste bonding region 102a is located at the periphery of the glass paste isolation groove 103, or in other words, the glass paste isola...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides an MEMS glass size bonding structure and a manufacturing method of the MEMS glass size bonding structure. The MEMS glass size bonding structure comprises a sealing cap silicon wafer and a device silicon wafer, wherein the sealing cap silicon wafer is provided with a micro-machine protective cavity and a first glass size bonding area which is arranged at the periphery of the micro-machine protective cavity, the device silicon wafer is provided with a micro-machine structure groove and a second glass size bonding area which is arranged at the periphery of the micro-machine structure groove, the position of the micro-machine structure groove corresponds to the position of the micro-machine protective cavity, glass size isolating grooves are formed in the sealing cap silicon wafer and between the micro-machine protective cavity and the first glass size bonding area, glass size protective grooves are formed in the device silicon wafer and between the micro-machine structure groove and the second glass size bonding area, the positions of the glass size protective grooves correspond to the positions of the glass size isolating grooves in the sealing cap silicon wafer, and bonding between the first glass size bonding area and the second glass size bonding area is carried out through glass size. The MEMS glass size bonding structure can reduce the areas of the glass size bonding areas, wherein the area has been enlarged due to the fact that transverse extension of the glass size is carried out.
Description
technical field [0001] The invention relates to MEMS technology, in particular to a MEMS glass paste bonding structure and a manufacturing method thereof. Background technique [0002] Micro Electro Mechanical System (MEMS, MicroElectroMechanicalSystem) is a new type of interdisciplinary technology developed in recent years, which will have a revolutionary impact on human life in the future. MEMS technology is known as a revolutionary high-tech in the 21st century. Its development began in the 1960s, and it is an ingenious combination of microelectronics and micromechanics. The basic technologies of MEMS mainly include silicon anisotropic etching technology, silicon-silicon bonding technology, surface micro-mechanical technology, LIGA technology, etc. The above-mentioned technologies have become indispensable core technologies for the development and production of MEMS. [0003] In the silicon-based MEMS processing technology, some products such as accelerometers, gyroscope...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/00B81C3/00B81C1/00
Inventor 闻永祥季锋刘琛饶晓俊
Owner HANGZHOU SILAN INTEGRATED CIRCUIT