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Packaging-prior-to-etching passive device type three-dimensional system-level metal circuit board structure and process method thereof

A passive device, etching first and then sealing technology, which is applied in the manufacture of electric solid state devices, semiconductor devices, semiconductor/solid state devices, etc., and can solve the problems of limiting the functionality and application performance of metal lead frames

Active Publication Date: 2013-11-20
江阴芯智联电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] The purpose of the present invention is to overcome the above-mentioned shortcomings, and provide a three-dimensional system-level metal circuit board structure and process method for etching first and then sealing passive devices, which can solve the problem that the traditional metal lead frame cannot be embedded in objects and limit the functionality and performance of the metal lead frame. application performance

Method used

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  • Packaging-prior-to-etching passive device type three-dimensional system-level metal circuit board structure and process method thereof
  • Packaging-prior-to-etching passive device type three-dimensional system-level metal circuit board structure and process method thereof
  • Packaging-prior-to-etching passive device type three-dimensional system-level metal circuit board structure and process method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0186] Embodiment 1, single-layer line passive device single-turn pin

[0187] see Figure 23 , is a structural schematic diagram of Embodiment 1 of a three-dimensional system-level metal circuit board structure of passive devices that are etched first and then sealed in accordance with the present invention. It includes a metal substrate frame 1, and base islands 2 and pins 3 are arranged in the metal substrate frame 1. The front of the base island 2 and the pin 3 is provided with a passive device 5 through a conductive or non-conductive adhesive substance 4, and a conductive pillar 6 is arranged on the front of the pin 3. The area around the base island 2, the base island The area between 2 and pin 3, the area between pin 3 and pin 3, the area above base island 2 and pin 3, the area below base island 2 and pin 3, and the passive components 5 and conductive The pillars 6 are all encapsulated with a molding compound 7, the molding compound 7 is flush with the top of the condu...

Embodiment 2

[0233] Embodiment 2, single-turn passive device + electrostatic discharge ring

[0234] see Figure 24 , is a structural schematic diagram of Embodiment 2 of the three-dimensional system-level metal circuit board structure of passive devices that are etched first and then sealed in accordance with the present invention. The difference between Embodiment 2 and Embodiment 1 lies in: between the base island 2 and the pin 3 An electrostatic discharge ring 9 is provided.

Embodiment 3

[0235] Embodiment 3, multi-turn passive device + electrostatic discharge ring

[0236] see Figure 25 , is a structural schematic diagram of Embodiment 3 of the three-dimensional system-level metal circuit board structure of passive devices that are etched first and then sealed in accordance with the present invention. The difference between Embodiment 3 and Embodiment 1 lies in: between the base island 2 and the pin 3 An electrostatic discharge ring 9 is provided, and a plurality of conductive pillars 6 are provided on the pin 3 .

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Abstract

The invention relates to a packaging-prior-to-etching passive device type three-dimensional system-level metal circuit board structure and a process method thereof. The structure comprises a metal substrate frame, wherein a pad and pins are arranged in the metal substrate frame; passive devices are arranged on the front surfaces of the pad and the pins; conductive columns are arranged on the front surfaces of the pins; molding compounds are encapsulated in the peripheral area of the pad, the areas between the pad and the pins and between each two pins, the upper areas of the pad and the pins, the lower areas of the pad and the pins, and the external areas of the passive devices and the conductive columns; and anti-oxidation layers are plated on the surfaces, exposed from the molding compounds, of the metal substrate frame, the pins and the conductive columns. By virtue of the packaging-prior-to-etching passive device type three-dimensional system-level metal circuit board structure and the process method thereof, the problem of limitation of the functionality and application performance of a metal lead frame caused by difficulty in embedding of an object into a conventional metal lead frame can be solved.

Description

technical field [0001] The invention relates to a three-dimensional system-level metal circuit board structure and process method for etching first and then sealing passive devices. It belongs to the technical field of semiconductor packaging. Background technique [0002] The basic manufacturing process methods of traditional metal lead frames are as follows: [0003] 1) Take a metal sheet and use the technology of mechanical upper and lower tool punching to make punching from top to bottom or bottom to top in a longitudinal manner, so that the lead frame can form a base island carrying a chip and signal transmission in the metal sheet The inner pins used are connected to the outer pins of the external PCB, and then some areas of the inner pins and (or) the base island are covered with metal plating to form a lead frame that can actually be used (see Figure 69~Figure 71 ). [0004] 2) Take a metal sheet and use chemical etching technology for exposure, development, windo...

Claims

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Application Information

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IPC IPC(8): H01L21/48H01L21/56H01L23/495H01L23/31H05K3/06H05K1/02
CPCH01L2924/19107H01L2224/49171
Inventor 张凯张友海廖小景王亚琴王孙艳
Owner 江阴芯智联电子科技有限公司
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