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Silicon nitride film deposition method, organic electronic device manufacturing method, and silicon nitride film deposition device

A technology of organic electronic devices and silicon nitride films, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, electrical components, etc., can solve problems such as shortened life of organic EL components, and achieve the effect of improving controllability

Inactive Publication Date: 2013-11-20
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the light-emitting layer is weak against water and oxygen, and when water or oxygen is mixed, its characteristics change, resulting in non-luminous spots (dark spots), which become a cause of shortening the life of organic EL elements

Method used

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  • Silicon nitride film deposition method, organic electronic device manufacturing method, and silicon nitride film deposition device
  • Silicon nitride film deposition method, organic electronic device manufacturing method, and silicon nitride film deposition device
  • Silicon nitride film deposition method, organic electronic device manufacturing method, and silicon nitride film deposition device

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Embodiment Construction

[0031] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, in this specification and the drawings, the same reference numerals are attached to constituent elements having substantially the same functions, and repeated descriptions are omitted.

[0032] First, a method for manufacturing an organic electronic device according to an embodiment of the present invention will be described together with a substrate processing system for implementing the method. figure 1 It is an explanatory diagram showing a schematic configuration of the substrate processing system 1 . figure 2 It is an explanatory drawing showing the manufacturing process of an organic EL device. In addition, in this embodiment mode, the case where an organic EL device is manufactured as an organic electronic device is demonstrated.

[0033] Such as figure 1 As shown, a cluster substrate processing system 1 has a transfer chamber 10 . The transport chamb...

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Abstract

A silicon nitride film deposition method for depositing a silicon nitride film on a substrate housed in a processing vessel, wherein a processing gas containing a silane gas, a nitrogen gas and a hydrogen gas is supplied to the processing vessel, plasma is generated by exciting the processing gas, and a silicon nitride film is deposited on the substrate by means of plasma processing with said plasma. The silicon nitride film is used as a sealing film of an organic electronic device. During the plasma processing with said plasma, the pressure inside the processing vessel is maintained between 20-60Pa.

Description

technical field [0001] The present invention relates to a method for forming a silicon nitride film, a method for manufacturing an organic electronic device, and a device for forming a silicon nitride film. Background technique [0002] In recent years, an organic EL element using organic electroluminescence (EL: Electro Luminescence), which is a light-emitting device including an organic layer, is being developed. Since organic EL elements are self-illuminating, they consume less power and have advantages such as superior viewing angles compared with liquid crystal displays (LCDs), etc., and future development is expected. [0003] The most basic structure of this organic EL element is a laminated structure (sandwich structure) in which a positive electrode (anode) layer, a light-emitting layer, and a negative electrode (cathode) layer are laminated on a glass substrate. Among them, the light-emitting layer is weak against water and oxygen, and when water or oxygen is mixe...

Claims

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Application Information

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IPC IPC(8): H01L21/318H01L51/50H05B33/04H05B33/10
CPCC23C14/165C23C16/45565C23C16/45574C23C16/511C23C16/345H01L51/5253H10K59/873H10K59/8722H01L21/02274H01L21/0254H01L21/02315
Inventor 石川拓
Owner TOKYO ELECTRON LTD
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