Wafer-level image sensor packaging structure and wafer-level image sensor packaging method

Abstract

The invention provides a wafter level image sensor encapsulation structure and a wafer level image sensor encapsulation method. The wafer level image sensor encapsulation structure comprises an image sensor chip and a guide line plate. The image sensor chip comprises a functional face, a light sensing structure and an electricity conducting cushion. The light sensing structure and the electricity conducting cushion are located on the functional face. The guide line plate comprises a plate body and a guide line. The plate body comprises a lower surface, an opening, a first upper surface and a second upper surface. The lower surface is fixed on the functional face. The opening exposes the light sensing structure. The first upper surface is higher than the second upper surface. The top end of the guide is located on the first surface. The bottom end of the guide line is located on the second upper surface and is connected to the electricity conducting cushion through a metal wire. The wafer level image sensor encapsulation structure has good heat dissipating performance and is capable of being ultra-thin.

Description

technical field [0001] The present invention relates to the field of image sensors, in particular to a wafer-level image sensor packaging structure and a wafer-level image sensor packaging method. Background technique [0002] An image sensor is a semiconductor device device that converts optical information into electrical signals. Existing image sensors may be further classified into complementary metal oxide semiconductor (CMOS) image sensors and charge coupled device (CCD) image sensors. [0003] Image sensors are developing toward miniaturization, and the new generation of electronic products has higher requirements for image sensor packaging structures, such as smaller shape and lower cost. However, the existing wafer-level image sensor packaging methods have the following disadvantages: [0004] 1. The existing wafer-level image sensor packaging method needs to make a back-side lead-out structure on the image sensor, that is, the back-side lead-out structure cannot ...

AI Technical Summary

Problems solved by technology

[0004] 1. The existing wafer-level image sensor packaging method needs to make a back-side lead-out structure on the image sensor, that is, the back-side lead-out structure cannot be separated from the image sensor and must be fabricated separately first, so the yield rate of the back-side lead-out structure is not easy to control independently. And the production yield of the lead-out structure on the back is not high, resulting in low packaging process yield;

[0005] 2. In addition to setting the rear lead-out structure in the existing wafer-level image sensor packaging method, it is also necessary to set a protective substrate on the functional surface of the image sensor for protection. In this way, the functional surface and the back surface of the image sensor need to be increased to a certain thickness, so it cannot Make the image sensor packaging structure thinner;

[0006] 3. When the existing wafer-level image sensor packaging method sets the backside lead-out structure of the image sensor, structures such as insulating layers and protective layers need to be provided on the backside to protect the corresponding wires. However, the setting of these wires, insulating layers or protective layers, It not only increases the complexity and process cost of the image sensor package, but also reduces the heat dissipation performance of the formed image sensor package structure

[0009] For this reason, there is an urgent need for a wafer-level image sensor packaging structure and a wafer-level image sensor packaging method to solve the problems of large thickness and poor heat dissipation performance of the existing wafer-level image sensor packaging structure. The problem of complex process and high process cost

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