Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and device for preparing solar-grade polysilicon by electron beam continuous melting

An electron beam melting and electron beam melting furnace technology is applied in the field of electron beam continuous melting to prepare solar-grade polysilicon, which can solve the problems of energy loss, lowering production efficiency, etc. Effect

Inactive Publication Date: 2016-03-02
QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the current process, which involves the addition, pouring, and repeated melting of silicon materials, the production efficiency is reduced and a large amount of energy is lost at the same time.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for preparing solar-grade polysilicon by electron beam continuous melting

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Such as figure 1 As shown, the device for preparing solar-grade polysilicon by electron beam continuous smelting includes a furnace body 1. A water-cooled melting crucible 2 is arranged on the inner upper part of the furnace body 1. One side of the melting crucible 2 has a concave melting pool. The other side of the melting crucible 2 is a downwardly inclined diversion area; the top of the furnace body 1 above the melting crucible 2 is connected with an electron gun 3 for melting and an electron gun 4 for melting, and the furnace located on the side of the melting pool of the melting crucible 2 The side wall of the body 1 is connected with a feeding mechanism 5, and the outlet of the feeding mechanism 5 is located above the melting pool; the bottom of the furnace body 1 below the pouring port of the diversion area is provided with a solidification crucible 6.

[0023] Wherein, the melting crucible 2 is a copper crucible with water cooling. The use of the copper crucibl...

Embodiment 2

[0027] Adopt the device described in embodiment 1, carry out electron beam continuous smelting and prepare solar grade polysilicon, carry out according to the following steps:

[0028] (1) Material preparation: Clean 500kg of silicon material with a phosphorus content of 0.005% using cleaning equipment to remove dust and oil stains on the surface, put it into a drying box, and dry it at 80°C. Put the dried silicon material into the material box of the feeding mechanism 5 and the melting crucible 2 respectively, wherein, put 5 kg in the melting crucible 2 as the melting base material, and put 10 kg in the solidification crucible 6 that has been melted by electron beams The purified silicon material is used as the solidified bottom material;

[0029] (2) Pretreatment: Combine the device with the furnace, start the cooling water circulation for the electron beam melting furnace, the melting crucible 2 and the solidification crucible 6, and start the vacuum system of the electron ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of polycrystalline silicon purification and particularly relates to a method and device for manufacturing solar grade polycrystalline silicon by continuously smelting electron beams. According to the method and device for manufacturing the solar grade polycrystalline silicon by continuously smelting the electron beams, a traditional electron beam smelting manner is broken, only melting and initial electron beam smelting are performed in a melting tank of a melting crucible, and concentrated electron beam smelting is performed in a guiding zone. Due to the fact that silicon liquid can be spread in the guiding zone and the specific surface area is enlarged, the smelting effect of the electron beams is better. Due to the fact that the guiding zone is of a structure inclining downwards, the silicon liquid after being smelted and purified flows into a solidification crucible, accumulation is performed in the solidification crucible, and the silicon liquid is finally taken out. The method and device for manufacturing the solar grade polycrystalline silicon by continuously smelting the electron beams have the advantages that the purpose of continuously removing phosphorus is achieved in the smelting process, the purification effect of the electron beams is better, and the phosphorus content of an obtained silicon ingot is lower than 0.000035%. With the method and device, the production efficiency can be improved by 20% or so, and the energy consumption in the whole production process can be reduced by more than 20%.

Description

technical field [0001] The invention belongs to the field of polysilicon purification, and in particular relates to a method and a device for preparing solar-grade polysilicon by electron beam continuous smelting. Background technique [0002] At present, my country has become the world's largest energy production and consumption country, but the per capita energy consumption level is still very low. With the continuous development of the economy and society, my country's energy demand will continue to grow. In response to the current energy shortage, countries around the world are thinking deeply, and are working hard to improve energy efficiency, promote the development and application of renewable energy, and reduce the impact on energy consumption. Reliance on imported oil to enhance energy security. [0003] As one of the important development directions of renewable energy, solar photovoltaic power generation has developed rapidly in recent years, and its proportion is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/037
Inventor 谭毅郭校亮姜大川安广野
Owner QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD