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Method and device for manufacturing polycrystalline silicon by coupling electron beam smelting technology and directional solidification technology

An electron beam smelting and electron beam smelting furnace technology is applied in the field of coupling electron beam smelting and directional solidification technology to prepare polysilicon, which can solve the problems of low production efficiency, increase overall investment and other problems, achieve improved production efficiency, good effect, save investment and The effect of floor space

Active Publication Date: 2013-12-04
DALIAN UNIV OF TECH QINGDAO NEW ENERGY MATERIALS TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this process, directional solidification involves the melting and solidification process of silicon material, and directional solidification also involves the melting and solidification process of silicon material. At the same time, the silicon material processed in the previous step needs to be crushed, cleaned and dried. Going to the next step increases the overall investment, and at the same time, the production efficiency of the whole process is low

Method used

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  • Method and device for manufacturing polycrystalline silicon by coupling electron beam smelting technology and directional solidification technology

Examples

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Effect test

Embodiment 1

[0025] like figure 1 As shown, the device for preparing polysilicon by coupling electron beam melting and directional solidification technology includes a furnace body 1, and the furnace body 1 is equipped with an electron beam melting component and a directional solidification component, wherein:

[0026] The electron beam melting assembly includes a water-cooled melting crucible 2 located in the upper part of the furnace body 1. One side of the melting crucible 2 has a concave melting pool. Area; the top of the furnace body 1 above the melting crucible 2 is connected with the electron gun 3 for melting and the electron gun 4 for melting, and the side wall of the furnace body 1 located at the side of the melting pool of the melting crucible 2 is connected with a feeding mechanism 5, and the feeding mechanism The outlet of 5 is located above the melting pool;

[0027] The directional solidification assembly includes a solidification crucible 6 located at the lower part of the...

Embodiment 2

[0032] Using the device described in Example 1, the coupling of electron beam melting and directional solidification technology to prepare polycrystalline silicon is carried out according to the following steps:

[0033] (1) Material preparation: 500kg of silicon materials with phosphorus and metal contents of 0.005% and 0.5% respectively are cleaned with cleaning equipment to remove dust and oil stains on the surface, put them into a drying box, and dry at a temperature of 80°C; The solidification crucible 6 is put into the graphite heating body 8, and the graphite heating body 8 is placed outside the graphite sleeve 9 to keep warm; the silicon material after drying is put into the feeding mechanism 5 and the melting crucible 2 respectively, wherein the melting crucible 2 is placed 5kg, as the smelting bottom material, put the silicon material after electron beam smelting and directional solidification purification into the solidification crucible 6 inner bottom as the solidific...

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Abstract

The invention belongs to the field of polycrystalline silicon purification and particularly relates to a method and device for manufacturing polycrystalline silicon by coupling the electron beam smelting technology and the directional solidification technology. According to the method and device for manufacturing the polycrystalline silicon by coupling the electron beam silicon smelting technology and the directional solidification technology, a traditional electron beam smelting manner is broken, only melting and initial electron beam smelting are performed in a melting tank of a melting crucible, and concentrated electron beam smelting is performed in a guiding zone. Due to the fact that silicon liquid can be spread in the guiding zone and the specific surface area is enlarged, the smelting effect of the electron beams is better. Due to the fact that the guiding zone is of a structure including downwards, the silicon liquid after being smelted and purified flows into a solidification crucible. In addition, the electron beam smelting and directional solidification can be well combined with the method and device for manufacturing the polycrystalline silicon so that electron beam smelting and directional solidification can be finished in one crucible, the process of primary solidification is removed, and breaking, cleaning and dying do not need to be performed again.

Description

Technical field [0001] The invention belongs to the field of polycrystalline silicon purification, and specifically relates to a method and device for preparing polycrystalline silicon by coupling electron beam melting and directional solidification technology. Background technique [0002] At present, our country has become a major energy producer and consumer in the world, but the per capita energy consumption level is still very low. With the continuous development of economy and society, my country's energy demand will continue to grow. In response to the current energy shortage, countries around the world are thinking deeply and working hard to improve energy utilization efficiency, promote the development and application of renewable energy, and reduce the use of energy. dependence on imported oil and enhance energy security. [0003] As one of the important development directions of renewable energy, solar photovoltaic power generation has developed rapidly in recent ...

Claims

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Application Information

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IPC IPC(8): C01B33/037
Inventor 谭毅郭校亮安广野张晓峰
Owner DALIAN UNIV OF TECH QINGDAO NEW ENERGY MATERIALS TECH RES INST CO LTD
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