Method and device for manufacturing polycrystalline silicon by coupling electron beam smelting technology and directional solidification technology
An electron beam smelting and electron beam smelting furnace technology is applied in the field of coupling electron beam smelting and directional solidification technology to prepare polysilicon, which can solve the problems of low production efficiency, increase overall investment and other problems, achieve improved production efficiency, good effect, save investment and The effect of floor space
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Embodiment 1
[0025] like figure 1 As shown, the device for preparing polysilicon by coupling electron beam melting and directional solidification technology includes a furnace body 1, and the furnace body 1 is equipped with an electron beam melting component and a directional solidification component, wherein:
[0026] The electron beam melting assembly includes a water-cooled melting crucible 2 located in the upper part of the furnace body 1. One side of the melting crucible 2 has a concave melting pool. Area; the top of the furnace body 1 above the melting crucible 2 is connected with the electron gun 3 for melting and the electron gun 4 for melting, and the side wall of the furnace body 1 located at the side of the melting pool of the melting crucible 2 is connected with a feeding mechanism 5, and the feeding mechanism The outlet of 5 is located above the melting pool;
[0027] The directional solidification assembly includes a solidification crucible 6 located at the lower part of the...
Embodiment 2
[0032] Using the device described in Example 1, the coupling of electron beam melting and directional solidification technology to prepare polycrystalline silicon is carried out according to the following steps:
[0033] (1) Material preparation: 500kg of silicon materials with phosphorus and metal contents of 0.005% and 0.5% respectively are cleaned with cleaning equipment to remove dust and oil stains on the surface, put them into a drying box, and dry at a temperature of 80°C; The solidification crucible 6 is put into the graphite heating body 8, and the graphite heating body 8 is placed outside the graphite sleeve 9 to keep warm; the silicon material after drying is put into the feeding mechanism 5 and the melting crucible 2 respectively, wherein the melting crucible 2 is placed 5kg, as the smelting bottom material, put the silicon material after electron beam smelting and directional solidification purification into the solidification crucible 6 inner bottom as the solidific...
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