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Process control method for directional solidification of polycrystalline silicon

A technology of directional solidification and process control, applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of difficulty in manufacturing silicon ingots, processing silicon ingots, deformation, poor thermal conductivity, etc. Control and calculation, uniquely conceived, simple to operate effects

Inactive Publication Date: 2013-12-11
青岛隆盛晶硅科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And if the silicon ingot size is too large, then, because the thermal conductivity of the silicon crystal is not good, the temperature difference between the bottom and the top will be too large and cause stress. In addition, the crystal is too long to cause deformation during the crystal growth process, and, more The important thing is that oversized silicon ingots bring difficulties to the manufacture of crucibles, the processing of silicon ingots, and the prescription of silicon ingots. Not only do new supporting equipment be required, but also the cost of auxiliary parts such as crucibles for these supporting equipment is brought big challenge
Therefore, the method of simply increasing the production capacity of a single furnace to reduce energy consumption per unit mass has faced a bottleneck

Method used

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  • Process control method for directional solidification of polycrystalline silicon
  • Process control method for directional solidification of polycrystalline silicon
  • Process control method for directional solidification of polycrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A device used in a polysilicon directional solidification process control method, comprising a furnace body, an upper furnace cover 1 connected with a ventilation pipeline 5 is installed on the top of the furnace body through an electric screw lifting mechanism 4 built in the furnace body, and a lower furnace cover 3 is connected by threads At the bottom of the furnace body, a crucible 19 is placed in the furnace body, and a rotatable lifting water-cooled platform mechanism 18 connected to the lower furnace cover 3 is fixedly connected with the bottom of the crucible 19. An upper heating device is installed directly above the crucible 19 in the furnace body, which includes a The upper water-cooled copper electrode 17 on the furnace wall, as well as the upper graphite electrode 16 and the upper heater graphite ring 15 installed in the furnace by means of bolts; a central heating device is installed on the outer side of the crucible 19 wall in the furnace body, which includ...

Embodiment 2

[0030] A process control method for directional solidification of polysilicon, using the device in Example 1, the preparation steps are as follows:

[0031] (1) Place a Φ900mm*600mm quartz crucible 19 in the furnace body, and connect it with the rotatable lifting water-cooling platform mechanism 18, and load 670kg of silicon material. The crucible 19 is surrounded and protected by a graphite crucible guard plate.

[0032] (2) The rotatable lifting water-cooling platform mechanism 18 drives the crucible 19 to descend, closes the upper furnace cover 1, and starts vacuuming.

[0033] (3) When the vacuum degree inside the furnace body reaches 1Pa, start to fill the furnace body with argon, and when the vacuum degree inside the furnace body reaches 60000Pa, start the upper heating device, the middle heating device and the lower heating device to start heating the silicon material 2. After 6 hours, the silicon material 2 starts to melt, and after another 4 hours of continuous heati...

Embodiment 3

[0045] A process control method for directional solidification of polysilicon, using the device in Example 1, the preparation steps are as follows:

[0046] (1) Place a Φ900mm*600mm quartz crucible 19 in the furnace body, and connect it with the rotatable lifting water-cooling platform mechanism 18, and load 640kg of silicon material. The crucible 19 is surrounded and protected by a graphite crucible guard plate.

[0047] (2) The rotatable lifting water-cooling platform mechanism 18 drives the crucible 19 to descend, closes the upper furnace cover 1, and starts vacuuming.

[0048] (3) When the vacuum degree inside the furnace body reaches 1Pa, start to fill the furnace body with argon, and when the vacuum degree inside the furnace body reaches 60000Pa, start the upper heating device, the middle heating device and the lower heating device to start heating the silicon material 2. After 6 hours, the silicon material 2 starts to melt, and after another 4 hours of continuous heati...

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Abstract

The invention belongs to the field of directional solidification, and particularly relates to a process control method for directional solidification of polycrystalline silicon, wherein temperatures of an upper portion heating device, a middle portion heating device and a lower portion heating device are separately adjusted after a silicon material is melted to carry out crystal growth and annealing cooling on the silicon body, and finally the ingot is taken. With the present invention, a furnace space can be maximally utilized, and an equipment investment cost can be saved; and the temperatures of the lower portion heating device and the middle portion heating device are controlled, and the water cooling manner is adopted to reduce the temperature of the bottom of the crucible so as to rapid cool, such that energy consumption per unit mass of the casting ingot is reduced.

Description

technical field [0001] The invention belongs to the field of directional solidification, in particular to a process control method for directional solidification of polysilicon. Background technique [0002] Directional solidification refers to the use of forced means in the solidification process to establish a temperature gradient in a specific direction in the solidified metal and unsolidified metal melt, so that the melt solidifies in the direction opposite to the heat flow, and finally obtains a columnar crystal with a specific orientation. Technology. Directional solidification is an important means to study solidification theory and metal solidification laws, and it is also an important method to prepare single crystal materials and micron-scale (or nano-scale) continuous fiber crystal high-performance structural materials and functional materials. Since the 1960s, directional solidification technology has developed rapidly. From the initial exothermic agent method ...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
Inventor 谭毅张淑贵任世强张晓峰姜大川
Owner 青岛隆盛晶硅科技有限公司