Preparation method of high-purity tantalum powder with centralized controllable particle size distribution

Abstract

The invention discloses a method for preparing high-purity tantalum powder with centralized controllable particle size distribution, which comprises: hydrogenating high-purity tantalum ingots into tantalum scraps, putting them into a pulverizer to beat and pulverize in an open manner, and then sieving, and the under-sieved The tantalum powder is classified by high-frequency oscillation, and then the classified tantalum powder is dried in a low-temperature vacuum, and finally the tantalum powder is dehydrogenated; among them, at least in the process of crushing and grading, the equipment in contact with the tantalum powder is made of 99.99% pure above made of tantalum. Preferably, the selected liquid is used as the medium during the classification process. With the process of the present invention, in the production process of tantalum powder, since all high-purity media are used, new impurities are rarely brought in, and subsequent pickling or other purification processes are not required, the process flow is shortened, economical and environmentally friendly, and tantalum The powder is low in carbon, low in oxygen, and low in impurities. When classifying, the liquid medium is in direct contact with the tantalum powder, which prevents the surface adhesion of the coarse and fine tantalum powder. After classification, the tantalum powder particles are clean and the particle size distribution is concentrated and controllable.

Description

technical field [0001] The invention relates to a method for preparing tantalum powder, in particular to a method for preparing high-purity tantalum powder with centralized and controllable particle size distribution by hydrogenation, crushing and classification of high-purity tantalum ingots. Background technique [0002] In the field of industrial technology, with the development of semiconductor technology, the degree of integration of computer chips is getting higher and higher. When the line width of the chip enters the range of 90-45nm, the Cu in the Cu coating will diffuse atomically to the Si sheet. In order to change this phenomenon, The chip coating process uses Ta as the barrier material to prevent the diffusion of Cu to Si, so the sputtering target is developed from the Al / Ti system to the Cu / Ta system, and the demand for tantalum sputtering targets has also increased significantly. Tantalum sputtering targets can be machined from high-purity tantalum ingots, or ...

AI Technical Summary

Problems solved by technology

These two classification techniques have their limitations, the classification is not thorough, and the particle size distribution of the obtained tantalum powder is not concentrated enough

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