Preparation method of particle size distribution concentrated and controllable high-purity tantalum powder

Abstract

The invention discloses a preparation method of particle size distribution concentrated and controllable high-purity tantalum powder. The method includes hydrogenating high-purity tantalum ingots into tantalum chips, placing the tantalum chips into a grinder for beating and grinding in an open manner prior to sieving, performing high-frequency oscillation classification on sieved tantalum powder, then subjecting the classified tantalum powder to low-temperature vacuum drying, and dehydrogenizing the dried tantalum powder. In the grinding and classification processes, all appliances in contact with the tantalum powder are made of tantalum with the purity more than 99.99%. Preferably, during classification, selection liquid is adopted as a medium. By means of the technology, in the production process of the tantalum powder, since high-purity media are adopted totally, few new impurities are brought in, subsequent pickling or other purification technologies are not required, technological process is shortened, and economy and environmental protection are realized; besides, the tantalum powder is low-carbon and low in oxygen and impurity; the liquid medium directly contacts with the tantalum powder during classification, and accordingly surface adhesion of coarse tantalum powder and fine tantalum powder is prevented; the classified tantalum powder is clean in particle and concentrated and controllable in particle size distribution.

Description

technical field [0001] The invention relates to a method for preparing tantalum powder, in particular to a method for preparing high-purity tantalum powder with centralized and controllable particle size distribution by hydrogenation, crushing and classification of high-purity tantalum ingots. Background technique [0002] In the field of industrial technology, with the development of semiconductor technology, the degree of integration of computer chips is getting higher and higher. When the line width of the chip enters the range of 90-45nm, the Cu in the Cu coating will diffuse atomically to the Si sheet. In order to change this phenomenon, The chip coating process uses Ta as the barrier material to prevent the diffusion of Cu to Si, so the sputtering target is developed from the Al / Ti system to the Cu / Ta system, and the demand for tantalum sputtering targets has also increased significantly. Tantalum sputtering targets can be machined from high-purity tantalum ingots, or ...

AI Technical Summary

Problems solved by technology

These two classification techniques have their limitations, the classification is not thorough, and the particle size distribution of the obtained tantalum powder is not concentrated enough

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