Chemical mechanical equipment polishing solution

Abstract

The invention discloses a chemical mechanical equipment polishing solution which comprises the following substances in parts by weight: 15-35 parts of sulfocyanate, 15-25 parts of salicylate, 7-16 parts of ethylene bis stearamide, 9-13 parts of glycerol monostearate, 9-14 parts of glycerol tristearate, 1-3 parts of reducing agent, 5-8 parts of softening agent, 7-10 parts of decontamination agent, 11-18 parts of treatment agent, 3-5 parts of titanium dioxide, 2-4 parts of monopotassium phosphate, 1-2 parts of molecular sieve, 1 part of kieselguhr, 2-4 parts of sosium borate, 1 part of mica powder with a lamellar structure, and 1-2 parts of hollow glass bead. The chemical mechanical polishing solution can restrain a polishing rate of a low-dielectric material, has a small influence on a removal rate of copper and silicon dioxide, and can reduce surface contaminants of a polished material.

Description

technical field [0001] The invention relates to a chemical mechanical equipment polishing fluid. Background technique [0002] Due to the high dielectric constant of the traditional dielectric layer material, the capacitance between the conductive layers will increase, which will affect the speed of the integrated circuit and reduce the efficiency. With the complexity and refinement of the integrated circuit, this base material It is increasingly unable to meet the technical requirements of more advanced processes. The introduction of low dielectric materials into the substrate is an inevitable trend in the development of integrated circuit technology, and many polishing slurries for low dielectric materials have been produced. However, none of the low-dielectric material polishing fluids in the prior art has achieved the perfect combination of manufacturing cost and technical performance. Contents of the invention [0003] The technical problem to be solved by the invent...

AI Technical Summary

Problems solved by technology

[0002] Due to the high dielectric constant of the traditional dielectric layer material, the capacitance between the conductive layers will increase, which will affect the speed of the integrated circuit and reduce the efficiency. With the complexity and refinement of the integrated circuit, this base material It is increasingly unable to meet the technical requirements of more advanced processes. The introduction of low dielectric materials into the substrate is an inevitable trend in the development of integrated circuit technology, and many polishing slurries for low dielectric materials have been produced.

However, the current low-dielectric material polishing fluids in the prior art have not achieved the perfect combination of manufacturing cost and technical performance.