Modeling and simulation method for terahertz quantum cascade laser circuit based on heat effect

A technology of quantum cascade and simulation methods, applied in the field of lasers, can solve problems such as lack of

Inactive Publication Date: 2014-01-08
WUHAN UNIV
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Problems solved by technology

In terms of simulating the thermal effect simulation of THz QCL device phot

Method used

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  • Modeling and simulation method for terahertz quantum cascade laser circuit based on heat effect
  • Modeling and simulation method for terahertz quantum cascade laser circuit based on heat effect
  • Modeling and simulation method for terahertz quantum cascade laser circuit based on heat effect

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Embodiment

[0094] One, at first, introduce the theoretical knowledge that the present invention relates to.

[0095] 1. Theoretical basis.

[0096] Circuit modeling for THz QCL is the key to simulating THz QCL optoelectronic integrated circuit with the simulation method of microelectronic circuit. The essence of circuit simulation is to solve first-order differential equations about time, and if the performance of optoelectronic devices can be described by first-order differential equations (groups) about time, then optoelectronic devices must be written as an equivalent circuit. Whether it is a semiconductor laser as the core device of an optoelectronic integrated circuit or other light emitting and photodetecting devices, a set of rate equations can be used to describe its performance. For THz QCL, a set of rate equations describing its performance has its own particularity. First, THz QCL is a monopole intersubband transition laser, that is, only one kind of carrier (electron) emits...

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Abstract

Provided is a modeling and simulation method for a terahertz quantum cascade laser circuit considering a heat effect. The theoretical calculation formula of the single-stage optical gain coefficient G of a THzQCL active layer, a corresponding electron rate equation and a corresponding photon rate equation are built, the heat rate equation of a THzQCL is built, the physical equation model representing the internal carrier transport of the THzQCL and the heat effect is obtained through simultaneity, and then a corresponding equivalent circuit model is obtained. An equivalent circuit model representing the electrical characteristics of the input end of the THzQCL is built, and an equivalent circuit model representing the optical power characteristics of the output end of the THzQCL is built. Finally, a circuit macro-model is built and comprises an electrical port and an optical power output port, and photoelectric property simulation and temperature property testing are carried out based on the circuit macro-model. The method can test the influence of the temperature on all the photoelectric properties of the THzQCL, simulation on the photoelectric properties of the THzQCL can be achieved, simulation speed and efficiency is improved, and the need for achieving photoelectric mixing simulation on photoelectric devices in actual optoelectronic integrated circuit design and application can be met.

Description

technical field [0001] The invention relates to the field of laser technology, and mainly relates to a circuit modeling method of a novel semiconductor laser, in particular to a thermal effect-based circuit modeling method of a terahertz quantum cascade laser. Background technique [0002] Since the world's first terahertz quantum cascade laser (THz QCL) was successfully developed in 2002, among many THz radiation generation methods, QCL is known for its high energy conversion efficiency, small size, portability and easy integration. And other advantages to become the preferred light source in the field of terahertz research in the future. At present, the successfully trial-produced THz QCL devices are mainly QCLs with resonant phonon structures in GaAs / AlGaAs material systems. In addition, researchers have also carried out related design research on Ge / SiGe material systems and InGaAs / AlInGaAs / InP material systems. [0003] THz QCL is a semiconductor intersubband device wi...

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Application Information

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IPC IPC(8): G06F17/50
Inventor 祁昶石新智
Owner WUHAN UNIV
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